Physics of the Solid State

, Volume 39, Issue 6, pp 907–912 | Cite as

Light scattering by electrons in the excitonic absorption region of GaAs

  • S. O. Kognovitskii
  • V. V. Travnikov
  • Ya. Aaviksoo
  • I. Reimand
Semiconductors. Dielectrics


A study has been made of the effect of the additional generation of photoexcited electrons on the excitonic absorption and luminescence spectra of ultrapure GaAs samples at T=2 K. The observed increase in the absorption coefficient for the ground (n=1) excitonic state is shown to originate from the polariton character of the energy spectrum of this state and to be due to an increase of polariton damping. The increased damping observed under electron generation is caused by polariton scattering from hot electrons as the latter undergo thermalization. As a result, the polaritons are heated. The changes observed in the luminescence spectra are produced by the reverse effect of electron heating and polariton cooling.


Spectroscopy State Physics Absorption Coefficient GaAs Light Scattering 
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Copyright information

© American Institute of Physics 1997

Authors and Affiliations

  • S. O. Kognovitskii
    • 1
  • V. V. Travnikov
    • 1
  • Ya. Aaviksoo
    • 2
  • I. Reimand
    • 2
  1. 1.A. F. Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Institute of PhysicsEstonian Academy of SciencesTartuEstonia

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