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Magnetoresistance and Hall effect of the magnetic semiconductor HgCr2Se4 in strong magnetic fields

  • Semiconductors and Insulators
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Abstract

The giant decrease of the electrical resistance of HgCr2Se4 (more than by a factor of 200) caused by magnetic field-induced changes in the carrier mobility and concentration, the quadratic dependences of magnetoresistance and normal Hall constant on magnetic induction in the paramagnetic region, as well as the deviations from these dependences observed to occur as one approaches the Curie temperature, are discussed within a model involving carriers of several types (holes in the valence band, electrons localized at ferron-type impurity centers, and electrons hybridized in the impurity and conduction bands).

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Authors and Affiliations

  1. Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, 620219, Ekaterinburg, Russia

    N. I. Solin & N. M. Chebotaev

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  1. N. I. Solin
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  2. N. M. Chebotaev
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Fiz. Tverd. Tela (St. Petersburg) 39, 848–852 (May 1997)

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Solin, N.I., Chebotaev, N.M. Magnetoresistance and Hall effect of the magnetic semiconductor HgCr2Se4 in strong magnetic fields. Phys. Solid State 39, 754–758 (1997). https://doi.org/10.1134/1.1129962

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  • DOI: https://doi.org/10.1134/1.1129962

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