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Acoustoelectric domain in piezoelectric semiconductors: Nucleation and properties

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Abstract

A model is proposed for the onset and development of an acoustoelectric domain in piezoelectric semiconductors as the acoustic instability grows. The model not only gives a qualitative description of all the basic nontrivial features of the development of the domain but also permits quantitative estimates of its parameters: the amplitude and duration. The fact that the estimates are close to the experimental values is a testament to the correctness of the model.

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Authors and Affiliations

  1. Physics Institute at the Pedagogical University, 76-200, Slupsk, Poland

    V. M. Rysakov

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  1. V. M. Rysakov
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 39, 835–838 (May 1997)

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Rysakov, V.M. Acoustoelectric domain in piezoelectric semiconductors: Nucleation and properties. Phys. Solid State 39, 741–744 (1997). https://doi.org/10.1134/1.1129955

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  • DOI: https://doi.org/10.1134/1.1129955

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