Abstract
The temperature dependences (80–500 K) of the Hall coefficient and the resistivity of samples of schungite of types I and III (schungite I and schungite III), as well as a commercial glassy carbon, with carbon contents equal to 98, 30, and 99.99%, respectively, are measured. The character of the dependences of the resistivity and its numerical values are similar to those observed in polycrystalline graphites with a high degree of disorder and in synthetic glassy carbon. Conversely, the Hall coefficient in the schungite samples, as in high-quality single crystals and n-type intercalated compounds of graphite, is found to be negative, small in magnitude, and weakly dependent on the temperature. At room temperature it is equal to 2.83×10−22 and 0.305 cm3/C in schungite I and schungite III, respectively, the Hall mobility of the charge carriers in these materials is 8.0 and 9.2 cm2/V·s, and the Hall carrier concentration is 2.2×1020 and 2.0×1019 cm−3.
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Fiz. Tverd. Tela (St. Petersburg) 39, 1783–1786 (October 1997)
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Berezkin, V.I., Kholodkevich, S.V. & Konstantinov, P.P. Hall effect in the natural glassy carbon of schungites. Phys. Solid State 39, 1590–1593 (1997). https://doi.org/10.1134/1.1129903
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DOI: https://doi.org/10.1134/1.1129903