Abstract
The initial stages of formation of an Yb-Si(111) interface are investigated by several methods: thermal desorption spectroscopy, atomic beam modulation, and low-energy electron diffraction. The structure of the adsorbed films and ytterbium silicide films is analyzed over a wide range of surface coverage ratios, along with the desorption kinetics of Yb atoms. The desorption activation energies of Yb atoms are measured for 3×2, 5×1, and 2×1 submonolayer structures. The temperature interval in which ytterbium silicide decomposes and the activation energy of this process are determined. It is shown that the Yb-Si(111) phase interface evolves by a mechanism similar to the Stransky-Krastanov mechanism.
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Fiz. Tverd. Tela (St. Petersburg) 39, 256–263 (February 1997)
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Krachino, T.V., Kuz’min, M.V., Loginov, M.V. et al. Initial stages of formation of a Yb-Si(111) interface. Phys. Solid State 39, 224–229 (1997). https://doi.org/10.1134/1.1129789
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DOI: https://doi.org/10.1134/1.1129789