Inorganic Materials: Applied Research

, Volume 5, Issue 2, pp 133–137 | Cite as

Structure and luminescence of silicon irradiated by protons

  • N. N. Gerasimenko
  • A. N. Mikhailov
  • V. V. Kozlovskii
  • O. A. Zaporozhan
  • N. A. Medetov
  • D. I. Smirnov
  • D. A. Pavlov
  • A. I. Bobrov
Materials of Electronic

Abstract

The temperature dependence of photoluminescence (PL) in the range 8–300 K is studied for single crystalline silicon irradiated by protons at high temperatures. It is shown that the samples with p-type conductivity display intense PL in contrast to the samples with n-type conductivity, which do not display photo-luminescence. Studies using high-resolution transmission electron microscopy (TEM) have shown that photoluminescence exists until crack formation and splitting of the irradiated layer. The rodlike defects {113} formed during irradiation transform into residual fragments of dislocation structures.

Keywords

rodlike defects {113} proton irradiation photoluminescence 

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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • N. N. Gerasimenko
    • 1
    • 2
  • A. N. Mikhailov
    • 3
  • V. V. Kozlovskii
    • 4
  • O. A. Zaporozhan
    • 1
  • N. A. Medetov
    • 5
  • D. I. Smirnov
    • 1
    • 2
  • D. A. Pavlov
    • 6
  • A. I. Bobrov
    • 6
  1. 1.National Research University of Electronic TechnologyMoscowRussia
  2. 2.Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia
  3. 3.Research Physical-Technical Institute (NIFTI)Nizhni Novgorod State UniversityNizhni NovgorodRussia
  4. 4.St. Petersburg State Polytechnical UniversitySt. PetersburgRussia
  5. 5.Kostanai Physical-Technical UniversityKostanaiKazakhstan
  6. 6.Nizhni Novgorod State UniversityNizhni NovgorodRussia

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