The Diffusion Stage of Silicon Carbide Growth at the Pyrocarbon–Liquid Silicon Interface

  • I. L. SinaniEmail author
  • V. M. BushuevEmail author
  • S. G. Lunegov


The present paper is devoted to the study of a limiting stage of silicon carbide diffusion growth at the pyrocarbon–silicon melt interface. The main diffusion parameters of the process have been determined using a generalized kinetic equation and experimental data. The main kinetic law has been written for this stage.


pyrocarbon surface growth rate liquid silicon silicon carbide multistep process stationarity condition activation energy carbide layer thickness 



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© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Perm National Research Polytechnic UniversityPermRussia
  2. 2.JSC Ural Research Institute of CompositesPermRussia

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