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The Diffusion Stage of Silicon Carbide Growth at the Pyrocarbon–Liquid Silicon Interface

  • I. L. SinaniEmail author
  • V. M. BushuevEmail author
  • S. G. Lunegov
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Abstract

The present paper is devoted to the study of a limiting stage of silicon carbide diffusion growth at the pyrocarbon–silicon melt interface. The main diffusion parameters of the process have been determined using a generalized kinetic equation and experimental data. The main kinetic law has been written for this stage.

Keywords:

pyrocarbon surface growth rate liquid silicon silicon carbide multistep process stationarity condition activation energy carbide layer thickness 

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Perm National Research Polytechnic UniversityPermRussia
  2. 2.JSC Ural Research Institute of CompositesPermRussia

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