DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures

  • P. A. Sokolov
  • N. V. Bazlov
  • A. O. Puchkova
  • O. F. Vyvenko
  • N. A. Kasyanenko
Molecular and Supramolecular Structures at Interfaces


DNA molecules immobilization on n-type single silicon was investigated. Electronic states were studied by measuring voltage-ampere characteristics (VAC) of Au-(n-Si) contacts with DNA molecules on the interface. It is showed that strong DNA fixation is observed in the presence of magnesium ions in solution. Molecules conformation on the surface is determined by the degree of the substrate hydrophobicity. Developed method of DNA immobilization allows to create model systems with the molecules in the form of molecular mesh or ropes depending on irradiation intensity. Formed on the silicon surface molecular structures have different effect on the electrical properties of Au-DNA-(n-Si) contacts. Presence of molecular mesh on the Schottky diode interface makes its VAC similar to ideal diode. The ropes lead to electronic state density increasing.


Light Emit Diode Atomic Force Microscope Image Silicon Surface Ideal Diode Linear Charge Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 1.
    Seeman, N.C., Current Opinion in Structural Biology, 1996, vol. 6, no. 4, pp. 519–526.CrossRefGoogle Scholar
  2. 2.
    Ben-Jacob, E., Hermon, Z., and Caspi, S., Physics Letters A, 1999, vol. 263, no. 3, pp. 199–202.CrossRefGoogle Scholar
  3. 3.
    Rothemund, Paul W. K., Nature, 2006, vol. 440, no. 7082, pp. 297–302.CrossRefGoogle Scholar
  4. 4.
    Qun Gu, Chuanding Cheng, Ravikanth Gonela, et al., Nanotechnology, 2006, vol. 17, R14.CrossRefGoogle Scholar
  5. 5.
    Endres, R.G., Cox, D.L., and Singh, R.R.P., Reviews of Modern Physics, 2004, vol. 76, pp. 195–214.CrossRefGoogle Scholar
  6. 6.
    Estrela, P., Stewart, A.G., Migliorato, et al., Electron Devices Meeting, 2004, IEDM Technical Digest. IEEE International, 13–15 Dec. 2004, pp. 1009–1012.Google Scholar
  7. 7.
    Nauka, K., Li, Z., and Kamins, T.I., Materials Science-Poland, 2005, vol. 23, no. 3, pp. 653–661.Google Scholar
  8. 8.
    Li, Z., Chen, Y., Li, X., Kamins, T.I., et al., Nano Letters, 2004, vol. 4, no. 2, pp. 245–247.CrossRefGoogle Scholar
  9. 9.
    Volkov, I.L., Bazlov, N.V., Bondarenko, A.S., et al., Journal of Structural Chemistry, 2009, vol. 50, no. 5, pp. 962–969.CrossRefGoogle Scholar
  10. 10.
    Salih Okura, Fahrettin Yakuphanoglub, Mehmet Ozsozc, et al., Microelectronic Engineering, 2009, vol. 86, no. 11, pp. 2305–2311.CrossRefGoogle Scholar
  11. 11.
    Qiao-Yu Sun, et al., J. Am. Chem. Soc., 2005, vol. 127, no. 8, pp. 2514–2523.CrossRefGoogle Scholar
  12. 12.
    Todd Strother, Wei Cai, Xinshen Zhao, et al., J. Am. Chem. Soc., 2000, vol. 122, pp. 1205–1209.CrossRefGoogle Scholar
  13. 13.
    Sze, S.M., Physics of Semiconductor Devices, 2 edn., New York: Wiley, 1981.Google Scholar
  14. 14.
    Rhoderick, E.H., Metal-Semiconductor Contacts, Oxford: Clarendon Press, 1978.Google Scholar
  15. 15.
    Lyon, W.A., Fang, M.M., Haskins W.E., et al., Anal. Chem., 1998, vol. 70, no. 9, pp. 1743–1748.CrossRefGoogle Scholar
  16. 16.
    Zhaoxiang Deng and Chengde Mao, Nano Lett., 2003, vol. 3, no. 11, pp. 1545–1548.CrossRefGoogle Scholar
  17. 17.
    Bodlaki, D. and Borguet, E., J. Phys. Chem. C, 2007, vol. 111, pp. 234–239.CrossRefGoogle Scholar
  18. 18.
    Morse, K.A. and Pianetta, P., Soc. Symp. Proc., 2002, vol. 716, pp. B6.8.2–8.8.7.Google Scholar
  19. 19.
    Ranga Rao, G., Bull. Mater. Sci., 2004, vol. 27, no. 6, pp. 497–500.CrossRefGoogle Scholar
  20. 20.
    Naoko Takahashi, R&D Review of Toyota CRDL, vol. 41, no. 1, p. 52.Google Scholar
  21. 21.
    Siokou, A., Kefalas, D., and Ntais, S., Surface Science, 2004, vols. 532–535, pp. 472–477.Google Scholar
  22. 22.
    Anastassopoulou, Jane, Journal of Molecular Structure, 2003, vols. 651–653, pp. 19–26.CrossRefGoogle Scholar
  23. 23.
    Angermann, H., Henrion, W., Roseler, A., et al., Mater. Sci. Engin., 2000, B73, pp. 178–183.Google Scholar
  24. 24.
    Bonincontro, A., Caveva, R. and Pedone, F., Eur Biophys L., 1987, vol. 15, pp. 59–63.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • P. A. Sokolov
    • 1
  • N. V. Bazlov
    • 1
  • A. O. Puchkova
    • 1
  • O. F. Vyvenko
    • 1
  • N. A. Kasyanenko
    • 1
  1. 1.Department of PhysicsSaint-Petersberg State UniversitySaint-Petersberg, Stariy PetergofRussia

Personalised recommendations