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DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures

  • P. A. Sokolov
  • N. V. Bazlov
  • A. O. Puchkova
  • O. F. Vyvenko
  • N. A. Kasyanenko
Molecular and Supramolecular Structures at Interfaces

Abstract

DNA molecules immobilization on n-type single silicon was investigated. Electronic states were studied by measuring voltage-ampere characteristics (VAC) of Au-(n-Si) contacts with DNA molecules on the interface. It is showed that strong DNA fixation is observed in the presence of magnesium ions in solution. Molecules conformation on the surface is determined by the degree of the substrate hydrophobicity. Developed method of DNA immobilization allows to create model systems with the molecules in the form of molecular mesh or ropes depending on irradiation intensity. Formed on the silicon surface molecular structures have different effect on the electrical properties of Au-DNA-(n-Si) contacts. Presence of molecular mesh on the Schottky diode interface makes its VAC similar to ideal diode. The ropes lead to electronic state density increasing.

Keywords

Light Emit Diode Atomic Force Microscope Image Silicon Surface Ideal Diode Linear Charge Density 
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Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • P. A. Sokolov
    • 1
  • N. V. Bazlov
    • 1
  • A. O. Puchkova
    • 1
  • O. F. Vyvenko
    • 1
  • N. A. Kasyanenko
    • 1
  1. 1.Department of PhysicsSaint-Petersberg State UniversitySaint-Petersberg, Stariy PetergofRussia

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