Nanotechnologies in Russia

, Volume 5, Issue 5–6, pp 313–319 | Cite as

Formation of integrated nanosized graphene structures by focused ion-beam etching

  • I. I. Bobrinetskii
  • K. V. Gorshkov
  • V. K. Nevolin
  • K. A. Tsarik
Articles

Abstract

Ion-beam methods of nanostructure formation in multigraphene layers integrated with a system of current-carrying electrodes during microelectronic group processing have been developed. The results demonstrate the feasibility of both thinning the structures down to several graphene layers and forming quasione-dimensional strips on the basis of the structures.

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References

  1. 1.
    Yu. E. Lozovik, S. P. Merkulova, and A. A. Sokolik, “Collective Electron Phenomena in Graphene,” Usp. Fiz. Nauk, 178(7), 757–776 (2008) [Phys.—Usp. 51 (7), 727–744 (2008)].Google Scholar
  2. 2.
    S. V. Morozov, K. S. Novoselov, and A. K. Geim, “Electron Transport in Graphene,” Usp. Fiz. Nauk, 178(7), 776–780 (2008) [Phys.—Usp. 51 (7), 744–748 (2008)].CrossRefGoogle Scholar
  3. 3.
    A. K. Geim and K. S. Novoselov, “The Rise of Graphene,” Nat. Mater. 6, 183–191 (2007).CrossRefPubMedADSGoogle Scholar
  4. 4.
    K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-Dimensional Atomic Crystals,” Proc. Natl. Acad. Sci. USA 102(30), 10 451–10 453 (2005).CrossRefGoogle Scholar
  5. 5.
    A. K. Geim and F. Kim, “Carbon Wonderland,” Sci. Am., No. 4, 68–75 (2008).Google Scholar
  6. 6.
    X. Li, G. Zhang, X. Bai, X. Sun, X. Wang, E. Wang, and H. Dai, “Highly Conducting Graphene Sheets and Langmuir-Blodgett Films,” Nat. Nanotechnol. 3, 538–542 (2008).CrossRefPubMedGoogle Scholar
  7. 7.
    Y. Hernandez, V. Nicolosi, M. Lotya, F. M. Blighe, Z. Sun, S. De, I. T. McGovern, B. Holland, M. Byrne, Y. K. Gun’Ko, J. J. Boland, P. Niraj, G. Duesberg, S. Krishnamurthy, R. Goodhue, J. Hutchison, V. Scardaci, A. C. Ferrari, and J. N. Coleman, “High-Yield Production of Graphene by Liquid-Phase Exfoliation of Graphite,” Nat. Nanotechnol. 3, 563–568 (2008).CrossRefPubMedGoogle Scholar
  8. 8.
    C. Berger, Z. Song, T. Li, X. Li, A. Y. Ogbazghi, R. Feng, Z. Dai, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, “Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-Based Nanoelectronics,” J. Phys. Chem. B 108, 19 912–19 915 (2004).Google Scholar
  9. 9.
    M. C. Lemme, D. C. Bell, J. R. Williams, L. A. Stern, B. W. H. Baugher, P. Jarillo-Herrero, and C. M. Marcus, “Etching of Graphene with a Helium Ion Beam,” Am. Chem. Soc. Nano 3(9), 2674–2676 (2009).Google Scholar
  10. 10.
    V. A. Gribkov, F. I. Grigor’ev, B. A. Kalin, and V. L. Yakushin, Advanced Radiation-Beam Technologies for Material Treatment (Kruglyi God, Moscow, 2001) [in Russian].Google Scholar
  11. 11.
    A. E. Eklund, E. J. Snyder, and R. S. Williams, “Correlation from Randomness: Quantitative Analysis of Ion-Etched Graphite Surfaces Using the Scanning Tunneling Microscope Surface,” Science (Washington) 285(3), 157–180 (1993).Google Scholar
  12. 12.
    Handbook of Physical Quantities, Ed. by I. S. Grigoriev and E. L. Meilikhov (Energoatomizdat, Moscow, 1991; CRC Press, Boca Raton, FL, United States, 1997).Google Scholar
  13. 13.
    K. S. Novoselov, A. K. Geim, S. V. Morozov, and D. Jiang, “Electric Field Effect in Atomically Thin Carbon Films,” Science (Washington) 306(5696), 666–669 (2004).CrossRefADSGoogle Scholar
  14. 14.
    A. I. Aksenov, I. I. Bobrinetskii, V. K. Nevolin, and M. M. Simunin, “Temperature Dependence of the Electrical Conductivity of Structures Based on Carbon Nanotubes under Atmospheric Conditions,” Datchiki Sist., No. 9, 60–64 (2006).Google Scholar
  15. 15.
    C. Gomez-Navarro, M. Burghard, and K. Kern, “Elastic Properties of Chemically Derived Single Graphene Sheets,” Nano Lett. 8(7), 2045–2049 (2008).CrossRefPubMedADSGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • I. I. Bobrinetskii
    • 1
  • K. V. Gorshkov
    • 1
  • V. K. Nevolin
    • 1
  • K. A. Tsarik
    • 1
  1. 1.Moscow Institute of Electronic Technology (Technical University)MoscowRussia

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