Nanotechnologies in Russia

, Volume 4, Issue 1–2, pp 129–136 | Cite as

High-stable nonvolatile electrically reprogrammable memory on self-formed conducting nanostructures

  • V. M. MordvintsevEmail author
  • S. E. Kudryavtsev
  • V. L. Levin


The results of designing, fabricating, and testing experimental samples of memory matrices whose memory element is based on self-formed conducting nanostructures created in electroformed open “sandwich” structures Si- SiO2-W are given. A possible practical usage of such memory is shown. The unique combination of its consumer properties, e.g., high operating speed, thermal stability, radiation resistance, and potentially high-density data recording, is demonstrated. The possibility of manufacturing the memory matrices by standard silicon technology is shown as well.


Memory Cell Conducting Medium Matrix Cell Memory Element Switching Cycle 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Pleiades Publishing, Ltd. 2009

Authors and Affiliations

  • V. M. Mordvintsev
    • 1
    Email author
  • S. E. Kudryavtsev
    • 1
  • V. L. Levin
    • 1
  1. 1.Physicotechnological Institute, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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