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Russian Journal of Applied Chemistry

, Volume 86, Issue 7, pp 997–1000 | Cite as

Fabrication of coatings based on epoxy resins for environmental protection of microelectronics

  • A. P. Krysin
  • O. I. Yakovlev
Electrochemistry and Other Processes of Chemical Technology

Abstract

Modified coating for protection of microelectronics from external effects, including radiation, was created on the basis of epoxy resins. The coating was produced with a modifier, thioalkaphene B, containing polysulfide derivatives of ortho-tert-butyl phenol. The mechanism of its action was explained. The technology for coating deposition was tested on an industrial automated line; the thus protected semiconductor devices successfully passed tests in extreme working conditions.

Keywords

Semiconductor Device Reverse Current Boron Oxide Phenolic Antioxidant Electromagnetic Signal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Kremnevye planetarnye tranzistory (Planar Silicon Transistors), Fedorov, Ya.A., Ed., Moscow, 1973.Google Scholar
  2. 2.
    Grassie, N. and Scott, G., Polymer Degradation and Stabilisation, New York: Cambridge Univ. Press, 1985.Google Scholar
  3. 3.
    WO Patent 120993.Google Scholar
  4. 4.
    Japan. Patent 168730.Google Scholar
  5. 5.
    Japan. Patent 08 2666.Google Scholar
  6. 6.
    Krysin, A.P., Egorova, T.G., Komarova, N.I., et al., Zh. Prikl. Khim., 2009, vol. 82, no. 11, pp. 1817–1821.Google Scholar
  7. 7.
    Nikulicheva, O.N., Krysin, A.P., and Fadeeva, V.P., Zh. Prikl. Khim., 2008, vol. 81, no. 9, pp. 1517–1521.Google Scholar
  8. 8.
    Nikulicheva O.N., Pokrovskii I.M., Fadeeva V.P., and Logvinenko A.A., J. Termal Analysis a. Calorimetry, 2000, vol. 60, pp. 157–161.CrossRefGoogle Scholar
  9. 9.
    USSR Inventor’s Certificate no. 1387361.Google Scholar
  10. 10.
    RF Patent 2391361.Google Scholar
  11. 11.
    USSR Inventor’s Certificate no. 1657517.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2013

Authors and Affiliations

  1. 1.Vorozhtsov Institute of Organic Chemistry in Novosibirsk, Siberian BranchRussian Academy of SciencesNovosibirskRussia
  2. 2.Novosibirsk Plant of Semiconductor Devices with an R & D OfficeNovosibirskRussia

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