Russian Journal of General Chemistry

, Volume 85, Issue 5, pp 1252–1259 | Cite as

Plasma chemical etching of high-aspect-ratio silicon micro- and nanostructures

Supplement: Rossiiskii Khimicheskii Zhurnal-Zhurnal Rossiiskogo Khimicheskogo Obshchestva im. D.I. Mendeleeva (Russian Chemistry Journal)

Abstract

High-aspect-ratio (HAR) silicon etching of micro-and nanostructures in a time-multiplexed deep etching process (Bosch process) is reviewed, including applications, different technological methods, critical challenges, and main principles of the technologies. HAR silicon etching is an application associated primarily with micro- and nanostructures. This potentially large-scale application requires HAR etching with a high throughput and controllable profile and surface properties. The most significant effects like RIE lag, bowing, stop effect, and profile shape dependence are discussed.

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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  1. 1.Yaroslavl Branch, Physical Technological Institute Federal State Budgetary EnterpriseRussian Academy of SciencesYaroslavlRussia

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