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Simulation of the impact of heavy charged particles on the characteristics of field-effect silicon-on-insulator transistors

  • A. A. GlushkoEmail author
  • L. A. Zinchenko
  • V. A. Shakhnov
Physical Processes in Electron Devices

Abstract

A technique for numerical simulation of variation in the drain current in a silicon-on-insulator field-effect transistor with indirect gate caused by the impact of a heavy charged particle is discussed. The SRIM software and the Synopsys TCAD Sentaurus software suite for process and device simulation are used for simulation. The obtained results are used for formulation of the guidelines on selection of the transistor geometry are formulated based on.

Keywords

Current Pulse Krypton Drain Current Device Simulation Equivalent Channel 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    J. M. Hutson, PhD Thesis (Vanderbilt Univ., Nashville, 2008).Google Scholar
  2. 2.
    S. A. Morozov and S. A. Sokolov, Sb. Nauch. Tr. NIISI RAN 1 (2), 47 (2011).Google Scholar
  3. 3.
    O. A. Amusan, Master Sci. Thesis (Vanderbilt Univ., Nashville, 2006).Google Scholar
  4. 4.
    J. R. Schwank, M. R. Shaneyfelt, and P. E. Dodd, Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance (Document SAND-2008-6851P, Albuquerque: Sandia Nat. Lab., 2008).Google Scholar
  5. 5.
    M. Varadharadjaperumal, IEEE Trans. Nucl. Sci. 51, 3298 (2004).CrossRefGoogle Scholar
  6. 6.
    A. K. Sutton, PhD Thesis (Georgia Inst. Technol., Atlanta, 2009).Google Scholar
  7. 7.
    G. I. Zebrev, Russ. Microelectron. 35, 177 (2006).CrossRefGoogle Scholar
  8. 8.
    F. Faccio and G. Cervelli, IEEE Trans. Nucl. Sci. 52, 2413 (2005).CrossRefGoogle Scholar
  9. 9.
    J.-P. Colinge, Sol. Stat. Electron. 48, 897 (2004).CrossRefGoogle Scholar
  10. 10.
    A. A. Glushko and V. A. Shakhnov, Russ. Microelectron. 41, 71 (2012).CrossRefGoogle Scholar
  11. 11.
    Sentaurus Device User Guide. Version G-2012.06 (Synopsys, Mountain View, 2012).Google Scholar
  12. 12.
    J. Ziegler, Particle Interactions with Matter (Website) www.srim.org.Google Scholar
  13. 13.
    A. Giraldo, A. Paccagnella, and A. Minzoni, Sol. Stat. Electron. 44, 981 (2000).CrossRefGoogle Scholar
  14. 14.
    V. Verstov, V. Shakhnov, and L. Zinchenko, Technological Innovation for Collective Awareness System, Ed. by L. M. Camarinha-Matos, N. S. Barrento, and R. Mendonça in Ser. IFIP: Advances in Information and Communication Technology (Springer-Verlag, Berlin, 2014), Vol. 423, p. 543.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Inc. 2015

Authors and Affiliations

  • A. A. Glushko
    • 1
    Email author
  • L. A. Zinchenko
    • 1
  • V. A. Shakhnov
    • 1
  1. 1.Bauman State Technical UniversityMoscowRussia

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