Simulation of the impact of heavy charged particles on the characteristics of field-effect silicon-on-insulator transistors
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A technique for numerical simulation of variation in the drain current in a silicon-on-insulator field-effect transistor with indirect gate caused by the impact of a heavy charged particle is discussed. The SRIM software and the Synopsys TCAD Sentaurus software suite for process and device simulation are used for simulation. The obtained results are used for formulation of the guidelines on selection of the transistor geometry are formulated based on.
KeywordsCurrent Pulse Krypton Drain Current Device Simulation Equivalent Channel
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