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Technical Physics Letters

, Volume 45, Issue 12, pp 1237–1240 | Cite as

Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate

  • L. S. LuninEmail author
  • O. V. Devitskii
  • I. A. Sysoev
  • A. S. Pashchenko
  • I. V. Kas’yanov
  • D. A. Nikulin
  • V. A. Irkha
Article
  • 9 Downloads

Abstract

Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire.

Keywords:

ion-beam deposition wide-bandgap semiconductors aluminum nitride gallium nitride sapphire. 

Notes

FUNDING

This work was performed in the framework of state orders to the Federal Research Center Southern Scientific Center of the Russian Academy of Sciences for 2019, projects nos. 01201354240 and AAAA-A19-119040390081-2.

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • L. S. Lunin
    • 1
    • 2
    Email author
  • O. V. Devitskii
    • 1
    • 3
  • I. A. Sysoev
    • 3
  • A. S. Pashchenko
    • 1
    • 2
  • I. V. Kas’yanov
    • 3
  • D. A. Nikulin
    • 3
  • V. A. Irkha
    • 1
  1. 1.Federal Research Center, Southern Scientific Center of the Russian Academy of SciencesRostov-on-DonRussia
  2. 2.Platov South Russian State Polytechnic UniversityNovocherkasskRussia
  3. 3.North Caucasus Federal UniversityStavropolRussia

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