Advertisement

Technical Physics Letters

, Volume 45, Issue 10, pp 1016–1019 | Cite as

Selective Sensors of Nitrogen Dioxide Based on Thin Tungsten Oxide Films under Optical Irradiation

  • A. V. AlmaevEmail author
  • N. N. Yakovlev
  • E. V. Chernikov
  • O. P. Tolbanov
Article
  • 11 Downloads

Abstract

It is shown that NO2 present in air, beginning at a concentration of 1 ppm, can be selectively detected by sensors based on Au/WO3:Au thin films activated by laser diode radiation with maximum intensity at 400 nm instead of constant heating. The radiation-activated photodesorption reduces the time of sensor response to NO2. A high humidity of air under conditions of room-temperature irradiation additionally increases the device sensitivity to NO2 due to the appearance of additional adsorption sites. The absence of a sensor response to reducing gases and varying oxygen concentration in the atmosphere is caused by the photodesorption of chemisorbed  \({\text{O}}_{2}^{ - }\) species during their interaction with holes generated in intrinsic optical transitions in the near-surface region of WO3 film.

Keywords:

nitrogen dioxide tungsten trioxide thin films magnetron sputtering optical radiation. 

Notes

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

REFERENCES

  1. 1.
    O. V. Anisimov, V. I. Gaman, N. K. Maksimova, Yu. P. Najden, V. A. Novikov, E. Yu. Sevast’yanov, F. V. Rudov, and E. V. Chernikov, Semiconductors 44, 366 (2010).  https://doi.org/10.1134/S1063782610030164 ADSCrossRefGoogle Scholar
  2. 2.
    O. V. Anisimov, N. K. Maksimova, Yu. P. Naiden, V. A. Novikov, E. Yu. Sevast’yanov, F. V. Rudov, and E. V. Chernikov, Russ. J. Phys. Chem. A 84, 1220 (2010).  https://doi.org/10.1134/S003602441007023X CrossRefGoogle Scholar
  3. 3.
    S. Kabcum, N. Kotchasak, D. Channei, A. Tuantranont, A. Wisitsoraat, S. Phanichphant, and C. Liewhiran, Sens. Actuators, B 252, 523 (2017). https://doi.org/10.1016/j.snb.2017.06.011 CrossRefGoogle Scholar
  4. 4.
    F. F. Vol’kenshtein, Electronic Processes on the Surface of Semiconductors during Chemisorption (Nauka, Moscow, 1987) [in Russian].Google Scholar
  5. 5.
    T. Saidi, D. Palmowski, S. Babicz-Kiewlicz, T. G. Welearegay, N. El Bari, R. Ionescu, J. Smulko, and B. Bouchikhi, Sens. Actuators, B 273, 1719 (2018).  https://doi.org/10.1016/j.snb.2018.07.098 CrossRefGoogle Scholar
  6. 6.
    E. Espid, A. S. Noce, and F. Taghipour, J. Photochem. Photobiol., A 374, 95 (2019).  https://doi.org/10.1016/j.jphotochem.2019.01.038 CrossRefGoogle Scholar
  7. 7.
    S. I. Rembeza, T. V. Svistova, N. N. Kosheleva, S. V. Ov-syannikov, and V. M. K. Al Tameemi, Tech. Phys. Lett. 41, 1128 (2015 https://doi.org/10.1134/S1063785015120135 ADSCrossRefGoogle Scholar
  8. 8.
    P. P. González-Borrero, F. Sato, A. N. Medina, M. L. Baesso, A. C. Bento, G. Baldissera, C. Persson, G. A. Niklasson, C. G. Granqvist, and A. Ferreira da Silva, Appl. Phys. Lett. 96, 061909 (2010).  https://doi.org/10.1063/1.3313945 ADSCrossRefGoogle Scholar
  9. 9.
    A. S. Chizhov, M. N. Rumyantseva, R. B. Vasiliev, D. G. Filatova, K. A. Drozdov, I. V. Krylov, A. V. Marchevsky, O. M. Karakulina, A. M. Abakumov, and A. M. Gaskov, Thin Solid Films 618, 253 (2016).  https://doi.org/10.1016/j.tsf.2016.09.029 ADSCrossRefGoogle Scholar
  10. 10.
    A. S. Chizhov, N. E. Mordvinova, M. N. Rumyantseva, I. V. Krylov, K. A. Drozdov, X. Li, and A. M. Gas’kov, Russ. J. Inorg. Chem. 63, 512 (2018).  https://doi.org/10.1134/S0036023618040071 CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • A. V. Almaev
    • 1
    Email author
  • N. N. Yakovlev
    • 1
  • E. V. Chernikov
    • 1
  • O. P. Tolbanov
    • 1
  1. 1.Tomsk State UniversityTomskRussia

Personalised recommendations