Abstract
The sensitivity at wavelengths in the range 400–1150 nm, dark current, and dynamic characteristics of an silicon avalanche photodiode with an active region 1.5 mm in diameter that we developed have been examined. It has been shown that the avalanche photodiode has the following set of characteristics: sensitivity 80–85 A/W at wavelengths of 900–1010 nm, dark current 1.5 nA, and leading and trailing edges shorter than 2.5 ns at a reverse bias voltage of 350 V.
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ACKNOWLEDGMENTS
We are grateful to our colleagues from the Ioffe Physical Technical Institute, N.V. Zabrodskaya, M.S. Lazeeva, M.V. Drozdova, and V.I. Marshalova, for assistance in fabrication of the photodiodes and to M.E. Levinshtein for helpful discussions. The study was carried out on the equipment of the Center of Collective Use Materials Science and Diagnostics in Advanced Technologies, Ioffe Physical Technical Institute, Ministry of Education and Science of the Russian Federation.
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The authors declare that they have no conflict of interest.
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Translated by M. Tagirdzhanov
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Aruev, P.N., Ber, B.Y., Gorokhov, A.N. et al. Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range. Tech. Phys. Lett. 45, 780–782 (2019). https://doi.org/10.1134/S1063785019080054
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DOI: https://doi.org/10.1134/S1063785019080054