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Technical Physics Letters

, Volume 44, Issue 12, pp 1188–1191 | Cite as

Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)

  • Yu. Yu. Illarionov
  • A. G. Banshchikov
  • N. S. Sokolov
  • S. Wachter
  • M. I. VexlerEmail author
Article

Abstract

The effect of increasing the tunnel current in a metal–calcium fluoride–silicon structure with addition of a silicon dioxide layer between fluoride and metal (which seems paradoxical at first glance) has been considered. This effect of nonmonotonic change in the tunnel conductivity with an increase in the insulator thickness may occur at a relatively high bias at the structure and is related to the tunnel-barrier deformation, at which electrons are tunneling through its part formed by the oxide. At low biases, the occurrence/ thickening of an additional layer leads to a natural decrease in the current. Similar behavior is possible in principle for some other combinations of materials.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • Yu. Yu. Illarionov
    • 1
    • 2
  • A. G. Banshchikov
    • 1
  • N. S. Sokolov
    • 1
  • S. Wachter
    • 3
  • M. I. Vexler
    • 1
    Email author
  1. 1.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Institute of MicroelectronicsVienna University of TechnologyViennaAustria
  3. 3.Institute of PhotonicsVienna University of TechnologyViennaAustria

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