Technical Physics Letters

, Volume 44, Issue 10, pp 926–929 | Cite as

Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001)

  • A. E. Kalmykov
  • A. V. MyasoedovEmail author
  • L. M. Sorokin


The defect structure of a thick (~15 μm) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defect structure of GaN epilayer has been revealed and analyzed. The influence of this asymmetry on the rate of decrease in the density of threading dislocations in the growing epitaxial layer is discussed.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1. Scholar
  2. 2.
    F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).Google Scholar
  3. 3.
    F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998).Google Scholar
  4. 4.
    M. Khoury, O. Tottereau, G. Feuillet, P. Vennegues, and J. Zuniga-Perez, J. Appl. Phys. 122, 105108 (2017).ADSCrossRefGoogle Scholar
  5. 5.
    C. F. Johnston, M. A. Moram, M. J. Kappers, and C. J. Humphreys, Appl. Phys. Lett. 94, 161109 (2009).ADSCrossRefGoogle Scholar
  6. 6.
    T. Wang, Semicond. Sci. Technol. 31, 093003 (2016).ADSCrossRefGoogle Scholar
  7. 7.
    A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, J. Appl. Phys. 100, 023522 (2006).ADSCrossRefGoogle Scholar
  8. 8.
    F. Wu, A. Tyagi, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck,J. Appl. Phys. 109, 033505 (2011).ADSCrossRefGoogle Scholar
  9. 9.
    G. Zhao, L. Wang, S. Yang, H. Li, H. Wei, D. Han, and Z. Wang, Sci. Rep. 6, 20787 (2016).ADSCrossRefGoogle Scholar
  10. 10.
    V. N. Bessolov, E. V. Konenkova, S. A. Kukushkin, A. V. Myasoedov, A. V. Osipov, S. N. Rodin, M. P. Shcheglov, and N. A. Feoktistov, Tech. Phys. Lett. 40, 386 (2014).ADSCrossRefGoogle Scholar
  11. 11.
    V. Bessolov, A. Kalmykov, E. Konenkova, S. Kukushkin, A. Myasoedov, N. Poletaev, and S. Rodin, J. Cryst. Growth 457, 202 (2017).ADSCrossRefGoogle Scholar
  12. 12.
    J.-L. Rouviere, M. Arlery, and A. Bourret, Inst. Phys. Conf. Ser. 157, 173 (1997).Google Scholar
  13. 13.
    S. K. Mathis, A. E. Romanov, L. F. Chen, G. Beltz, W. Pompe, and J. S. Speck, Phys. Status Solidi A 179, 125 (2000).ADSCrossRefGoogle Scholar
  14. 14.
    L. M. Sorokin, A. V. Myasoedov, A. E. Kalmykov, D. A. Kirilenko, V. N. Bessolov, and S. A. Kukushkin, Semicond. Sci. Technol. 30, 114002 (2015).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. E. Kalmykov
    • 1
  • A. V. Myasoedov
    • 1
    Email author
  • L. M. Sorokin
    • 1
  1. 1.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

Personalised recommendations