Technical Physics Letters

, Volume 44, Issue 10, pp 916–918 | Cite as

The Reliability of Revealing Threading Dislocations in Epitaxial Films by Structure-Sensitive Etching

  • A. S. Deryabin
  • L. V. Sokolov
  • E. M. TrukhanovEmail author
  • K. B. Fritzler


Correspondence between threading dislocations (TDs) in epitaxial films and the etch pits observed upon selective chemical etching of the samples was studied in Ge/Si(001) heterostructures. It is established that the density of TDs revealed in epitaxial films with thicknesses h ≤ 1 μm can be significantly understated because of insufficient resolution of optical microscopy. Recommendations are given that increase the reliability of PD density estimation by means of structure-sensitive etching.


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. S. Deryabin
    • 1
  • L. V. Sokolov
    • 1
  • E. M. Trukhanov
    • 1
    Email author
  • K. B. Fritzler
    • 1
  1. 1.Rzhanov Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia

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