Technical Physics Letters

, Volume 44, Issue 10, pp 946–948 | Cite as

Correlated Variation of Electrical Characteristics of a Thin-Film Field-Effect Transistor during Modification of the Physical Properties of an InZnO:N Oxide Semiconductor Channel

  • A. B. CheremisinEmail author
  • N. A. Kuldin


We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on the phenomenon of photoinduced charge accumulation in the semiconductor. It is established that the slopes and intercepts of the capacitance–voltage (CGVG) and transmission (IDVG) curves of the TFT under illumination exhibit correlated similar variations. The obtained results justify joint use of the CGVG and IDVG curves in the analysis of peculiarities of the energy band structure of oxide semiconductors.


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Petrozavodsk State UniversityPetrozavodskRussia

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