Advertisement

Technical Physics Letters

, Volume 44, Issue 10, pp 862–864 | Cite as

Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current

  • N. A. MaleevEmail author
  • M. A. Bobrov
  • A. G. Kuzmenkov
  • A. P. Vasil’ev
  • M. M. Kulagina
  • S. N. Maleev
  • S. A. Blokhin
  • V. N. Nevedomsky
  • V. M. Ustinov
Article
  • 9 Downloads

Abstract

The quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm2 at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm).

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    J. L. Hesler and T. Crowe, SPIE Newsroom (2015). doi 10.1117/2.1201506.005859Google Scholar
  2. 2.
    G. Liang, T. Liu, and Q. J. Wang, IEEE J. Sel. Top. Quantum Electron. 23, 1200118 (2017).Google Scholar
  3. 3.
    P. A. Zamora, G. Mei, K. M. K. H. Leong, M. Lange, J. Lee, W. Yoshida, B. S. Gorospe, J. G. Padilla, and W. R. Deal, IEEE Microwave Wireless Compon. Lett. 25, 591 (2015).CrossRefGoogle Scholar
  4. 4.
    A. Maestrini, J. S. Ward, J. J. Gill, C. Lee, B. Thomas, R. H. Lin, G. Chattopadhyay, and I. Mehdi, IEEE Trans. Microwave Theory Technol. 58, 1925 (2010).ADSCrossRefGoogle Scholar
  5. 5.
    E. Kollberg and A. Rydberg, Electron. Lett. 25, 1696 (1989).ADSCrossRefGoogle Scholar
  6. 6.
    J. Stake, A. Malko, T. Bryllert, and J. Vukusic, Proc. IEEE 105, 1008 (2017).CrossRefGoogle Scholar
  7. 7.
    Y. Fu, J. Stake, L. Dillner, M. Willander, and E. L. Kollberg, J. Appl. Phys. 82, 5568 (1997).ADSCrossRefGoogle Scholar
  8. 8.
    A. Malko, T. Bryllert, J. Vukusic, and J. Stake, in Proceedings of the 24 International Conference on Indium Phosphide and Related Materials, Santa Barbara, 2012, p. 92.Google Scholar
  9. 9.
    N. A. Maleev, V. A. Belyakov, A. P. Vasil’ev, M. A. Bobrov, S. A. Blokhin, M. M. Kulagina, A. G. Kuz’menkov, V. N. Nevedomskii, Yu. A. Guseva, S. N. Maleev, I. V. Ladenkov, E. L. Fefelova, A. G. Fefelov, and V. M. Ustinov, Semiconductors 51, 1431 (2017).ADSCrossRefGoogle Scholar
  10. 10.
    M. H. T. Dastjerdi, A. Sanz-Velasco, J. Vukusic, E. L. Kollberg, M. Sadeghi, and J. Stake, IEEE Electron Dev. Lett. 32, 140 (2011).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • N. A. Maleev
    • 1
    • 2
    Email author
  • M. A. Bobrov
    • 1
  • A. G. Kuzmenkov
    • 1
    • 3
  • A. P. Vasil’ev
    • 1
    • 3
  • M. M. Kulagina
    • 1
  • S. N. Maleev
    • 1
  • S. A. Blokhin
    • 1
  • V. N. Nevedomsky
    • 1
  • V. M. Ustinov
    • 1
    • 2
    • 3
  1. 1.Ioffe Physical Technical InstituteSt. PetersburgRussia
  2. 2.St. Petersburg Electrotechnical University “LETI”St. PetersburgRussia
  3. 3.Scientific and Technological Center of Microelectronics and Submicron HeterostructuresRussian Academy of SciencesSt. PetersburgRussia

Personalised recommendations