Technical Physics Letters

, Volume 44, Issue 10, pp 877–880 | Cite as

Optical Properties of InGaAs/InAlAs Metamorphic Nanoheterostructures for Photovoltaic Converters of Laser and Solar Radiation

  • V. M. Emel’yanovEmail author
  • N. A. Kalyuzhnyy
  • S. A. Mintairov
  • M. Z. Shvarts


Reflectance spectroscopy has been used to determine the refractive indices of nanoscale InxAlyGa1–xyAs and InxAl1–xAs layers with indium and aluminum concentrations x = 0.21–0.24 and y = 0, 0.1, and 0.2 on specially created Bragg-reflector heterostructures at wavelengths in the range 700–2000 nm. It was demonstrated that the method based on an analysis of the auto- and cross-correlation coefficients of the wavelength derivatives of the dependence of the reflectance of structures of this kind in order to determine the dispersion curves of the materials forming a reflector. It was found that raising the concentration of indium in InGaAs and AlInAs leads to a substantial rise in the refractive index, with a preserved spectral run of the refractive indices, which is characteristic of gallium arsenide and aluminum arsenide.


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. M. Emel’yanov
    • 1
    Email author
  • N. A. Kalyuzhnyy
    • 1
  • S. A. Mintairov
    • 1
  • M. Z. Shvarts
    • 1
  1. 1.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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