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Technical Physics Letters

, Volume 43, Issue 9, pp 849–852 | Cite as

Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium

  • S. P. Lebedev
  • I. A. Eliseyev
  • V. Yu. Davydov
  • A. N. Smirnov
  • V. S. Levitskii
  • M. G. Mynbaeva
  • M. M. Kulagina
  • B. Hähnlein
  • J. Pezoldt
  • A. A. Lebedev
Article
  • 36 Downloads

Abstract

We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons approached 6000 cm2/(V · s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at Т = 300 К in the absence of intercalated hydrogen.

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • S. P. Lebedev
    • 1
  • I. A. Eliseyev
    • 2
  • V. Yu. Davydov
    • 1
  • A. N. Smirnov
    • 1
    • 3
  • V. S. Levitskii
    • 4
  • M. G. Mynbaeva
    • 1
  • M. M. Kulagina
    • 1
  • B. Hähnlein
    • 5
  • J. Pezoldt
    • 5
  • A. A. Lebedev
    • 1
  1. 1.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State UniversitySt. PetersburgRussia
  3. 3.St. Petersburg National University of Information Technologies, Mechanics, and Optics (ITMO University)St. PetersburgRussia
  4. 4.R&D Center for Thin Film Technologies in EnergeticsSt. PetersburgRussia
  5. 5.FG Nanotechnologie, Institut für Mikro- und Nanotechnologien und Institut für Mikro- und NanoelektronikTechnische Universität IlmenauIlmenauGermany

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