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Technical Physics Letters

, Volume 43, Issue 1, pp 95–97 | Cite as

Polishing superhard material surfaces with gas-cluster ion beams

  • A. E. IeshkinEmail author
  • K. D. Kushkina
  • D. S. Kireev
  • Yu. A. Ermakov
  • V. S. Chernysh
Article

Abstract

We have studied the influence of bombardment with accelerated gas-cluster ions on the surface topography of silicon carbide and diamond. Atomic-force microscopy shows that exposure to 10-keV gas-cluster ions at a total dose above 1016 cm–2 leads to smoothing of the surface relief. The ion-etching rate and efficiency of the surface relief smoothing as dependent on the thickness of removed layer have been estimated. Raman-spectroscopy data show that surface irradiation with gas-cluster ions does not introduce defects into the crystalline structure of irradiated material.

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • A. E. Ieshkin
    • 1
    Email author
  • K. D. Kushkina
    • 1
  • D. S. Kireev
    • 1
  • Yu. A. Ermakov
    • 2
  • V. S. Chernysh
    • 1
    • 2
  1. 1.Department of PhysicsMoscow State UniversityMoscowRussia
  2. 2.Skobeltsyn Institute of Nuclear PhysicsMoscow State UniversityMoscowRussia

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