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Technical Physics Letters

, Volume 42, Issue 11, pp 1090–1093 | Cite as

Resonant electron tunneling and related charging phenomena in metal–oxide–p +-Si nanostructures

  • M. I. VexlerEmail author
  • G. G. Kareva
  • Yu. Yu. Illarionov
  • I. V. Grekhov
Article

Abstract

The jV characteristics of the Al/thermal or electrochemical SiO2(2–4 nm)/heavily doped p +-Si nanostructures operating as a resonant-tunneling diode were measured and theoretically analyzed. The characteristics have specific features in the form of current steps and peaks, which are caused by electron transport between the silicon valence band and metal through discrete levels of the quantum well formed by the p +-Si conduction band and SiO2/p +-Si interface. Resonant tunneling through the surface state levels and the appearance of a charge near this interface under certain conditions are discussed.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • M. I. Vexler
    • 1
    Email author
  • G. G. Kareva
    • 2
  • Yu. Yu. Illarionov
    • 1
    • 3
  • I. V. Grekhov
    • 1
  1. 1.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Physical FacultySt. Petersburg State UniversitySt. PetersburgRussia
  3. 3.Institute for MicroelectronicsTU WienViennaAustria

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