Technical Physics Letters

, Volume 42, Issue 5, pp 482–485 | Cite as

Electrochemical etching of p–n-GaN/AlGaN photoelectrodes

  • A. S. Usikov
  • H. Helava
  • A. Nikiforov
  • M. V. Puzyk
  • B. P. Papchenko
  • Yu. V. Kovaleva
  • Yu. N. Makarov
Article
  • 39 Downloads

Abstract

Specific features of etching of GaN/AlGaN p–n structures in a KOH-based electrolyte have been studied. It was found that the corrosion process first passes across p layers through vertical channels associated with threading structural defects. Then, the corrosion process occurs in the lateral direction along n layers of the structure, with local hollows and voids thereby formed. The lateral etching is due to the presence of positive piezoelectric charges at boundaries of n-AlGaN and n-GaN layers and positively charged ionized donors in the space-charge region of the p–n junction.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • A. S. Usikov
    • 1
    • 2
  • H. Helava
    • 2
  • A. Nikiforov
    • 4
  • M. V. Puzyk
    • 1
    • 3
  • B. P. Papchenko
    • 1
  • Yu. V. Kovaleva
    • 1
  • Yu. N. Makarov
    • 2
    • 5
  1. 1.National Research University of Information Technologies, Mechanics, and Optics (ITMO University)St. PetersburgRussia
  2. 2.Nitride Crystals Inc.New YorkUSA
  3. 3.Herzen State Pedagogical University of RussiaSt. PetersburgRussia
  4. 4.Boston University, Photonics CenterBostonUSA
  5. 5.Nitride Crystals Group of CompaniesSt. PetersburgRussia

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