Electrochemical etching of p–n-GaN/AlGaN photoelectrodes
- 39 Downloads
Specific features of etching of GaN/AlGaN p–n structures in a KOH-based electrolyte have been studied. It was found that the corrosion process first passes across p layers through vertical channels associated with threading structural defects. Then, the corrosion process occurs in the lateral direction along n layers of the structure, with local hollows and voids thereby formed. The lateral etching is due to the presence of positive piezoelectric charges at boundaries of n-AlGaN and n-GaN layers and positively charged ionized donors in the space-charge region of the p–n junction.
Unable to display preview. Download preview PDF.
- 3.K. Aryal, B. Pantha, R. Dahal, J. Li, J. Lin, and H. Jiang, Proceedings of the APS Meeting, (March 21–25, 2011),, abstract #W31.006.Google Scholar