Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers
A technique is proposed for testing thick (1 μm and larger) gradient layers with the composition and relaxation degree alternating over the layer depth on the basis of comparative analysis of X-ray scattered intensity maps in the reciprocal space and depth profiles of the crystal lattice parameters obtained by electron microdiffraction. The informativity of the proposed technique is demonstrated using the example of an In x Ga1–x As/GaAs layer with linear depth variation in x. Complex representation of the diffraction data in the form of the depth-profiled reciprocal space map allows taking into account the additional relaxation caused by thinning electron microscopy specimens.
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