Technical Physics Letters

, Volume 42, Issue 5, pp 464–467 | Cite as

Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers

  • M. V. Baidakova
  • D. A. Kirilenko
  • A. A. Sitnikova
  • M. A. Yagovkina
  • G. V. Klimko
  • S. V. Sorokin
  • I. V. Sedova
  • S. V. Ivanov
  • A. E. Romanov
Article

Abstract

A technique is proposed for testing thick (1 μm and larger) gradient layers with the composition and relaxation degree alternating over the layer depth on the basis of comparative analysis of X-ray scattered intensity maps in the reciprocal space and depth profiles of the crystal lattice parameters obtained by electron microdiffraction. The informativity of the proposed technique is demonstrated using the example of an In x Ga1–x As/GaAs layer with linear depth variation in x. Complex representation of the diffraction data in the form of the depth-profiled reciprocal space map allows taking into account the additional relaxation caused by thinning electron microscopy specimens.

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References

  1. 1.
    U. Pietsch, V. Holy, and T. Baumbach, High-Resolution X-Ray Scattering. From Thin Films to Lateral Nanostructures (Springer-Verlag, New York, 2004).CrossRefGoogle Scholar
  2. 2.
    H. Heinke, M. O. Moller, D. Hommel, et al., J. Cryst. Growth 135, 41 (1994).ADSCrossRefGoogle Scholar
  3. 3.
    P. B. Hirsh, A. Howie, R. B. Nicolson, et al., Electron Microscopy of Thin Crystals (Butterworths, London, 1965).Google Scholar
  4. 4.
    D. K. Bowen and B. K. Tanner, High Resolution X-Ray Diffractometry and Topography (Taylor and Francis, London, 1998).Google Scholar
  5. 5.
    P. F. Fewster, X-Ray Scattering from Semiconductors. 2nd ed. (Imperial College Press, London, 2003).CrossRefMATHGoogle Scholar
  6. 6.
    S. V. Sorokin, G. V. Klimko, and I. V. Sedova, in Proceedings of the 10th Belorussian–Russian Workshop on Semiconductor Lasers and Systems (Kovcheg, Minsk, 2015), p. 196.Google Scholar
  7. 7.
    D. Kirilenko, A. Sitnikova, S. V. Sorokin, et al., in Proceedings of the Microscopy Conference (Gottingen, Germany, 2015).Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • M. V. Baidakova
    • 1
    • 2
  • D. A. Kirilenko
    • 1
    • 2
  • A. A. Sitnikova
    • 1
  • M. A. Yagovkina
    • 1
  • G. V. Klimko
    • 1
  • S. V. Sorokin
    • 1
  • I. V. Sedova
    • 1
  • S. V. Ivanov
    • 1
  • A. E. Romanov
    • 1
    • 2
  1. 1.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)St. PetersburgRussia

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