Technical Physics Letters

, Volume 41, Issue 10, pp 946–949 | Cite as

Modeling the deflection of relativistic electrons in a bent silicon crystal

  • V. P. Koshcheev
  • Yu. N. Shtanov
  • D. A. Morgun
  • T. A. Panina


The deflection of electrons with energies 855 MeV and 6.3 GeV in planar (111) channels of a bent silicon crystal has been numerically simulated using a TROPICS computer code with atomic diffusion coefficient constructed in the Doyle–Turner approximation of the isolated atom potential. It is established that the atomic diffusion coefficient tends to a minimum value in the region of maximum nuclear density of atomic chain, where the Kitagawa–Ohtsuki diffusion coefficient reaches a maximum value.


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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  • V. P. Koshcheev
    • 1
  • Yu. N. Shtanov
    • 2
  • D. A. Morgun
    • 3
  • T. A. Panina
    • 3
  1. 1.Strela Branch of the National Research University MAI (Moscow Aviation Institute)Zhukovsky, Moscow oblast, 140180Russia
  2. 2.Surgut Oil and Gas InstituteBranch of Tyumen State Oil and Gas UniversitySurgut, Tyumen oblastRussia
  3. 3.Surgut State UniversitySurgut, Tyumen oblastRussia

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