Technical Physics Letters

, Volume 41, Issue 1, pp 21–24 | Cite as

Formation of cellular structure in SiGe layers under nanosecond laser irradiation



Heating, melting, and crystallization processes of SiGe solid solution on a silicon substrate occurring under the influence of nanosecond laser irradiation were numerically simulated. Formation of cellular structures during solidification of the binary melt due to a segregation element separation was analyzed. Calculation results were compared with known experimental data characterizing the duration of laser-induced phase transformations and average sizes of the cells (which are formed due to the effect of concentration supercooling) as a function of the power density in the laser pulse.


Technical Physic Letter Nanosecond Laser Crystallization Front SiGe Layer Nanosecond Laser Pulse 


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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  • E. I. Gatskevich
    • 1
  • G. D. Ivlev
    • 2
  • V. L. Malevich
    • 3
    • 4
  1. 1.Belarusian National Technical UniversityMinskBelarus
  2. 2.Belarusian State UniversityMinskBelarus
  3. 3.Institute of PhysicsNational Academy of Sciences of BelarusMinskBelarus
  4. 4.University of Information Technologies, Mechanics, and OpticsSt. PetersburgRussia

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