Analysis of stacking faults in gallium nitride by Fourier transform of high-resolution images
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We present results of studying stacking faults (SFs) in gallium nitride (GaN) with the aid of Fourier transform of high-resolution transmission electron microscopy (HRTEM) images. Using this method, it is possible both to determine the SF type and to directly measure the corresponding displacement vector. This allowed us to explain the peculiarities of the contrast of HRTEM of structures with high SF density (above 106 cm−1). It is established that the displacement vector component in the (0001) plane in these structures can significantly differ from the expected value of \((1/3)[00\bar 10]\) that is typical of single SFs.
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