The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon
The properties of special grain boundaries in multicrystalline silicon (mc-Si) grown from metallurgical refined silicon by the Bridgman-Stockbarger method have been studied. The electric activity of grain boundaries was characterized by measuring the electron-beam-induced current. Structural features of the mc-Si samples were studied by scanning electron microscopy, electron-probe microanalysis, and atomic force microscopy techniques.
KeywordsShear Band Technical Physic Letter Electron Beam Induce Current Twin Lamella Atomic Force Microscopy Technique
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