Technical Physics Letters

, Volume 38, Issue 10, pp 907–909 | Cite as

Fabrication of ultrafine silicon layers on sapphire

  • A. A. Shemukhin
  • Yu. V. Balakshin
  • V. S. Chernysh
  • A. S. Patrakeev
  • S. A. Golubkov
  • N. N. Egorov
  • A. I. Sidorov
  • B. A. Malyukov
  • V. N. Statsenko
  • V. D. Chumak
Article

Abstract

The effect of energy, dosage, and temperature of irradiation of silicon-on-sapphire structures by Si+ ions, as well as parameters of recrystallization annealing, on crystallinity of silicon film is shown. Implantation conditions and recrystallization annealing conditions are determined.

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Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • A. A. Shemukhin
    • 1
    • 2
    • 3
    • 4
  • Yu. V. Balakshin
    • 1
    • 2
    • 3
    • 4
  • V. S. Chernysh
    • 1
    • 2
    • 3
    • 4
  • A. S. Patrakeev
    • 1
    • 2
    • 3
    • 4
  • S. A. Golubkov
    • 1
    • 2
    • 3
    • 4
  • N. N. Egorov
    • 1
    • 2
    • 3
    • 4
  • A. I. Sidorov
    • 1
    • 2
    • 3
    • 4
  • B. A. Malyukov
    • 1
    • 2
    • 3
    • 4
  • V. N. Statsenko
    • 1
    • 2
    • 3
    • 4
  • V. D. Chumak
    • 1
    • 2
    • 3
    • 4
  1. 1.Skobeltsyn Institute of Nuclear PhysicsMoscow State UniversityMoscowRussia
  2. 2.Moscow State UniversityZelenograd, MoscowRussia
  3. 3.Research Institute of Material Science and TechnologyZelenograd, MoscowRussia
  4. 4.EPIEL CompanyZelenograd, MoscowRussia

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