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Technical Physics Letters

, Volume 38, Issue 5, pp 436–438 | Cite as

AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 μm) IR photodetectors

  • O. F. Butyagin
  • N. I. Katsavets
  • I. V. Kogan
  • D. M. Krasovitsky
  • V. B. Kulikov
  • V. P. Chalyi
  • A. L. Dudin
  • O. B. Cherednichenko
Article

Abstract

We have studied AlGaAs/GaAs multiquantum-well heterostructures grown by molecular beam epitaxy in an STE-3532 setup (SemiTEq, St. Petersburg), which are intended for long-wavelength IR photodetectors operating on inter-subband transitions. Quantum wells (QWs) in the obtained heterostructures are highly homogeneous and possess sharp heteroboundaries, which is confirmed by the photoluminescence spectra and dark current-voltage characteristics of photodetectors based on these heterostructures. The photodetectors exhibit sensitivity in the atmospheric transparency window (8–10 mm) and possess parameters that make possible their use in large-format photodetector arrays for a new generation of long-wavelength IR camera systems.

Keywords

GaAs Technical Physic Letter Nonequilibrium Carrier Dark Current Density Intersubband Transition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    A. Manissadjian, D. Gohier, E. Ostard, and A. Nedelcu, Proc. SPIE 6206, 111 (2006).Google Scholar
  2. 2.
    Ph. Bois, E. Costard, J. Y. Duboz, J. Nagle, E. Rosencher, and B. Vinter, Proc. SPIE 2552, 755 (1995).ADSCrossRefGoogle Scholar
  3. 3.
    V. G. Volkov, A. V. Kovalev, and V. T. Fedchishin, Spets. Tekhn. 1, 5 (2002).Google Scholar
  4. 4.
    A. Gromov, C. Asplund, S. Smuk, and H. Martijn, Proc. SPIE 6395, 639 502 (2006).Google Scholar
  5. 5.
    D. Z. Garbuzov, V. P. Evtichiev, N. I. Katsavets, A. V. Komissarov, I. E. Kudrik, I. V. Kudryashov, V. B. Khalfin, R. K. Bauer, Zh. I. Alferov, and D. Bimberg, J. Appl. Phys. 75, 4152 (1994).ADSCrossRefGoogle Scholar
  6. 6.
    K. L. Tsai, C. P. Lee, K. H. Chang, H. R. Chen, and J. S. Tsang, J. Appl. Phys. 76, 274 (1994).ADSCrossRefGoogle Scholar
  7. 7.
    V. B. Kulikov and I. V. Budkin, Prikl. Fiz. 5, 79 (2003).Google Scholar
  8. 8.
    B.F. Levine, J.Appl.Phys. 74, 1 (1993).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • O. F. Butyagin
    • 1
    • 2
  • N. I. Katsavets
    • 1
    • 2
  • I. V. Kogan
    • 1
    • 2
  • D. M. Krasovitsky
    • 1
    • 2
  • V. B. Kulikov
    • 1
    • 2
  • V. P. Chalyi
    • 1
    • 2
  • A. L. Dudin
    • 1
    • 2
  • O. B. Cherednichenko
    • 1
    • 2
  1. 1.POLYUS Research and Development InstituteMoscowRussia
  2. 2.Svetlana-ROST CorporationSt. PetersburgRussia

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