AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 μm) IR photodetectors
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We have studied AlGaAs/GaAs multiquantum-well heterostructures grown by molecular beam epitaxy in an STE-3532 setup (SemiTEq, St. Petersburg), which are intended for long-wavelength IR photodetectors operating on inter-subband transitions. Quantum wells (QWs) in the obtained heterostructures are highly homogeneous and possess sharp heteroboundaries, which is confirmed by the photoluminescence spectra and dark current-voltage characteristics of photodetectors based on these heterostructures. The photodetectors exhibit sensitivity in the atmospheric transparency window (8–10 mm) and possess parameters that make possible their use in large-format photodetector arrays for a new generation of long-wavelength IR camera systems.
KeywordsGaAs Technical Physic Letter Nonequilibrium Carrier Dark Current Density Intersubband Transition
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