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Technical Physics Letters

, 37:739 | Cite as

Specific features of multicrystalline silicon growth from high-purity commercial silicon

  • A. I. Nepomnyashchikh
  • R. V. Presnyakov
  • I. A. Eliseev
  • Yu. V. Sokol’nikova
Article

Abstract

The distribution of impurities in multicrystalline silicon (mc-Si) blocks grown at various velocities from refined commercial silicon by the Stochbarger method have been studied. It is established that the growth velocity V strongly influences the distribution of impurities along the block height. Growth at V > 1 cm/h leads to the breakdown of a crystallization front and the trapping of impurities. The results are explained by the concentration supercooling that arises when the growth velocity is increased above the critical level for a given type of initial material. The optimum rate for the crystallization with simultaneous effective purification of a commercial silicon from impurities has been experimentally determined.

Keywords

Inductively Couple Plasma Mass Spectrometry Technical Physic Letter Crystallization Front Block Height Multicrystalline Silicon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • A. I. Nepomnyashchikh
    • 1
  • R. V. Presnyakov
    • 1
  • I. A. Eliseev
    • 1
  • Yu. V. Sokol’nikova
    • 1
  1. 1.Vinogradov Institute of Geochemistry, Siberian BranchRussian Academy of SciencesIrkutskRussia

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