Specific features of multicrystalline silicon growth from high-purity commercial silicon
The distribution of impurities in multicrystalline silicon (mc-Si) blocks grown at various velocities from refined commercial silicon by the Stochbarger method have been studied. It is established that the growth velocity V strongly influences the distribution of impurities along the block height. Growth at V > 1 cm/h leads to the breakdown of a crystallization front and the trapping of impurities. The results are explained by the concentration supercooling that arises when the growth velocity is increased above the critical level for a given type of initial material. The optimum rate for the crystallization with simultaneous effective purification of a commercial silicon from impurities has been experimentally determined.
KeywordsInductively Couple Plasma Mass Spectrometry Technical Physic Letter Crystallization Front Block Height Multicrystalline Silicon
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