Studying defect structure of GaN epilayers by means of three-beam X-ray diffraction analysis
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- Kyutt, R.N. Tech. Phys. Lett. (2010) 36: 690. doi:10.1134/S1063785010080031
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X-ray multiple diffraction in epitaxial films of GaN with various densities of dislocations has been measured using Renninger scans for a primary forbidden (0001) reflection. The angular widths of three-beam diffraction peaks measured in both φ scans (rotation about the normal to the sample surface) and θ scans (rotation about the Bragg angle) have been analyzed. It is established that the three-beam Renninger diffraction peaks exhibit splitting due to a large-block structure of epilayers. For some three-beam combinations, the half-width (FWHM) of θ scan peaks is highly sensitive to the dislocation density.
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