Technical Physics Letters

, Volume 36, Issue 8, pp 690–693

Studying defect structure of GaN epilayers by means of three-beam X-ray diffraction analysis

Article

DOI: 10.1134/S1063785010080031

Cite this article as:
Kyutt, R.N. Tech. Phys. Lett. (2010) 36: 690. doi:10.1134/S1063785010080031

Abstract

X-ray multiple diffraction in epitaxial films of GaN with various densities of dislocations has been measured using Renninger scans for a primary forbidden (0001) reflection. The angular widths of three-beam diffraction peaks measured in both φ scans (rotation about the normal to the sample surface) and θ scans (rotation about the Bragg angle) have been analyzed. It is established that the three-beam Renninger diffraction peaks exhibit splitting due to a large-block structure of epilayers. For some three-beam combinations, the half-width (FWHM) of θ scan peaks is highly sensitive to the dislocation density.

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Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  1. 1.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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