Technical Physics Letters

, Volume 36, Issue 7, pp 675–678 | Cite as

Light-induced EMF in silver-palladium film resistors

Article

Abstract

We have studied the generation of nanosecond emf pulses in silver-palladium film resistors under the action of radiation of a Q-switched laser. The samples were fabricated using the technology of thick film resistors on dielectric substrates, based on fusing a resistive paste that contains palladium, silver oxide, glass, and an organic binder into the substrate at 880 K. The amplitude of detected pulses exhibits linear growth with the power of incident laser radiation, depends on the angle of light incidence (vanishes at the normal incidence) onto the film and the angle of film rotation about the normal to its surface, and changes its sign with that of the incidence angle. The duration of the generated emf pulses is several times that of the incident laser pulses. The signal is not of a thermoelectric nature and can be related to the current generation by means of the surface photogalvanic effect and the photon quasi-momentum transfer to charge carriers during light absorption by the film material.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    R. J. Von Gutfeld, Appl. Phys. Lett. 23, 206 (1973).CrossRefADSGoogle Scholar
  2. 2.
    V. I. Konov, P. I. Nikitin, D. G. Satyukov, and S. A. Uglov, Izv. Akad. Nauk SSSR, Ser. Fiz. 55, 1343 (1991).ADSGoogle Scholar
  3. 3.
    C. L. Chang, A. Kleinhammers, W. G. Moultan, and L. R. Testardi, Phys. Rev. B 41, 11 564 (1990).Google Scholar
  4. 4.
    V. A. Nikishkin, A. A. Sevenyuk, and A. V. Sukhov, Kvantovaya Élektron. (Moscow) 18, 1103 (1991) [Quant. Electron. 21, 999 (1991)].Google Scholar
  5. 5.
    A. A. Snarskii, A. M. Pal’ti, and A. A. Ashcheulov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1281 (1997) [Semiconductors 31, 1101 (1997)].Google Scholar
  6. 6.
    E. V. Beregulin, P. M. Valov, S. M. Ryvkin, et al., Pis’ma Zh. Éksp. Teor. Fiz. 25, 113 (1977) [JETP Lett. 25, 101 (1977)].Google Scholar
  7. 7.
    A. N. Obraztsov, D. A. Lyashenko, S. Fang, et al., Appl. Phys. Lett. 94, 231 112 (2009).CrossRefGoogle Scholar
  8. 8.
    G. M. Mikheev, R. G. Zonov, A. N. Obraztsov, and Yu. P. Svirko, Pis’ma Zh. Tekh. Fiz. 30(17), 88 (2004) [Tech. Phys. Lett. 30, 750 (2004)].Google Scholar
  9. 9.
    G. M. Mikheev, R. G. Zonov, A. N. Obraztsov, and Yu. A. Svirko, Pis’ma Zh. Tekh. Fiz. 31(3), 11 (2005) [Tech. Phys. Lett. 31, 94 (2005)].Google Scholar
  10. 10.
    G. M. Mikheev, R. G. Zonov, and A. N. Obraztsov, Izv. Vyssh. Ucheb. Zaved., Priborostr. 49(9), 33 (2006).Google Scholar
  11. 11.
    T. Hatano, B. Nishikawa, M. Iwanaga, and T. Ishihara, Opt. Express 16, 8236 (2008).CrossRefADSGoogle Scholar
  12. 12.
    G. M. Mikheev, R. G. Zonov, V. A. Aleksandrov, and L. M. Russkikh, Optoelectric Converter, RF Patent no. 2365027; Byul. Izobr., No. 23 (20.08.2009)Google Scholar
  13. 13.
    V. I. Smirnov, Physicochemical Principles of Electronic Technology (A Handbook) (UlGTU, Ul’yanovsk, 2005), Ch. 4, p. 93 [in Russian].Google Scholar
  14. 14.
    G. M. Mikheev, D. I. Maleev, and T. N. Mogileva, Kvantovaya Élektron. (Moscow) 19, 45 (1992) [Quant. Electron. 22, 37 (1992)].Google Scholar
  15. 15.
    B. N. Morozov and Yu. M. Aivazyan, Kvantovaya Élektron. (Moscow) 7, 5 (1980) [Quant. Electron. 10, 1 (1980)].Google Scholar
  16. 16.
    E. V. Beregulin, P. M. Voronov, S. V. Ivanov, et al., Pis’ma Zh. éksp. Teor. Fiz. 59, 83 (1994) [JETP Lett. 59, 85 (1994)].Google Scholar
  17. 17.
    V. L. Al’perovich, V. I. Belinichev, V. N. Novikov, and A. S. Terekhov, Zh. Éksp. Teor. Fiz. 80, 2298 (1981) [Sov. Phys. JETP 53, 1201 (1981)].ADSGoogle Scholar
  18. 18.
    V. L. Gurevich and R. Laiho, Fiz. Tverd. Tela (St. Petersburg) 42, 1762 (2000) [Phys. Solid State 42, 1807 (2000)].Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • G. M. Mikheev
    • 1
  • R. G. Zonov
    • 1
  • V. A. Aleksandrov
    • 1
  1. 1.Institute of Applied Mechanics, Ural BranchRussian Academy of SciencesIzhevsk, UdmurtiaRussia

Personalised recommendations