Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors
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- Kozyrev, A.B., Gaĭdukov, M.M., Gagarin, A.G. et al. Tech. Phys. Lett. (2009) 35: 585. doi:10.1134/S1063785009070013
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We have studied the response speed characteristics of capacitor structures based on thin Ba0.3Sr0.7TiO3 (BSTO) films with metal-ferroelectric contacts of various types formed under different conditions. It is established that threshold voltages exist for the appearance of a residual space charge in some structures. A comparative analysis of the technological features of contact formation and experimental data on the characteristics of samples leads to the conclusion that, by forming Pt-BSTO contacts in an oxygen-containing atmosphere, it is possible to suppress the injection of carriers into the ferroelectric film in the capacitor structure.