Technical Physics Letters

, Volume 35, Issue 7, pp 585–588

Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors

  • A. B. Kozyrev
  • M. M. Gaĭdukov
  • A. G. Gagarin
  • A. G. Altynnikov
  • S. V. Razumov
  • A. V. Tumarkin
Article

DOI: 10.1134/S1063785009070013

Cite this article as:
Kozyrev, A.B., Gaĭdukov, M.M., Gagarin, A.G. et al. Tech. Phys. Lett. (2009) 35: 585. doi:10.1134/S1063785009070013

Abstract

We have studied the response speed characteristics of capacitor structures based on thin Ba0.3Sr0.7TiO3 (BSTO) films with metal-ferroelectric contacts of various types formed under different conditions. It is established that threshold voltages exist for the appearance of a residual space charge in some structures. A comparative analysis of the technological features of contact formation and experimental data on the characteristics of samples leads to the conclusion that, by forming Pt-BSTO contacts in an oxygen-containing atmosphere, it is possible to suppress the injection of carriers into the ferroelectric film in the capacitor structure.

PACS numbers

77.55.+f 84.32.-y 84.32.Tt 84.40.-x 

Copyright information

© Pleiades Publishing, Ltd. 2009

Authors and Affiliations

  • A. B. Kozyrev
    • 1
  • M. M. Gaĭdukov
    • 1
  • A. G. Gagarin
    • 1
  • A. G. Altynnikov
    • 1
  • S. V. Razumov
    • 1
  • A. V. Tumarkin
    • 1
  1. 1.St. Petersburg State Electrotechnical UniversitySt. PetersburgRussia

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