Technical Physics Letters

, 34:731 | Cite as

High-temperature diffusion doping of porous silicon carbide

  • M. G. Mynbaeva
  • E. N. Mokhov
  • A. A. Lavrent’ev
  • K. D. Mynbaev
Article

Abstract

The results of experiments on high-temperature (2000–2200°C) diffusion doping of porous silicon carbide (PSC) by vanadium and erbium are reported. It is established that the specific features of diffusion processes in PSC at these temperatures are determined by modification of the porous structure due to the transport of vacancies. Based on a comparison of these results to available data on the low-temperature (900–1000°C) diffusion, it is concluded that the mechanisms of diffusion in PSC at low and high temperatures are different and that SiC with a porous structure is an effective medium particularly for low-temperature diffusion.

PACS numbers

61.43.Gt 66.30.J- 61.72.U- 

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Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • M. G. Mynbaeva
    • 1
  • E. N. Mokhov
    • 1
  • A. A. Lavrent’ev
    • 1
  • K. D. Mynbaev
    • 1
  1. 1.Ioffe Physico-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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