Technical Physics Letters

, Volume 33, Issue 4, pp 295–298

InSb/InAs quantum dots grown by liquid phase epitaxy

  • K. D. Moiseev
  • Ya. A. Parkhomenko
  • A. V. Ankudinov
  • E. V. Gushchina
  • M. P. Mikhaĭlova
  • A. N. Titkov
  • Yu. P. Yakovlev
Article

DOI: 10.1134/S1063785007040074

Cite this article as:
Moiseev, K.D., Parkhomenko, Y.A., Ankudinov, A.V. et al. Tech. Phys. Lett. (2007) 33: 295. doi:10.1134/S1063785007040074

Abstract

The first original results on the growth of quantum dots (QDs) in the InSb/InAs system by liquid phase epitaxy (LPE) are reported. The density and dimensions of QDs were studied by methods of scanning probe microscopy and atomic force microscopy. The surface density, shapes, and dimensions of LPE-grown nanoislands depend on the growth conditions (temperature, cooling rate, and solution melt-substrate contact time). In the interval of temperatures T = 420–445°C, homogeneous arrays of InSb quantum dots on InAs(100) substrates were obtained with an average height of H = 3.4 ± 1nm, a radius of R = 27.2 ± 7.5 nm, and a density of up to 1.9 × 1010 cm−2.

PACS numbers

73.21.La 81.15.Lm 

Copyright information

© Pleiades Publishing, Ltd. 2007

Authors and Affiliations

  • K. D. Moiseev
    • 1
  • Ya. A. Parkhomenko
    • 1
  • A. V. Ankudinov
    • 1
  • E. V. Gushchina
    • 1
  • M. P. Mikhaĭlova
    • 1
  • A. N. Titkov
    • 1
  • Yu. P. Yakovlev
    • 1
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia

Personalised recommendations