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Technical Physics

, Volume 64, Issue 11, pp 1704–1708 | Cite as

Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion

  • A. S. Tarasov
  • D. V. IshchenkoEmail author
  • A. N. Akimov
  • I. O. Akhundov
  • V. A. Golyashov
  • A. E. Klimov
  • N. S. Pashchin
  • S. P. Suprun
  • E. V. Fedosenko
  • V. N. Sherstyakova
  • O. E. Tereshchenko
Article
  • 16 Downloads

Abstract

High-resistance Pb1 –xSnxTe〈In〉 layers grown by molecular beam epitaxy on BaF2(111) substrates with compositions close to band inversion have been investigated. The I–V characteristics and relaxation dependences of the photocurrent of the structures in dependence on the chemical surface treatment and subsequent exposure of the samples in air have been examined. It has been observed that the characteristics significantly transform depending on the physicochemical surface state. It has been found that the chemical surface treatment in the hydrochloric acid solution in isopropyl alcohol leads to an increase in the current by up to four orders of magnitude with the subsequent recovery of the I–V characteristics upon exposure of the samples in air for several days.

Notes

ACKNOWLEDGMENTS

We thank B.M. Kuchumov, A.I. Antonenko, and E.L. Molodtsova for help in conducting the experiment.

FUNDING

This study was supported by the Russian Science Foundation, project no. 17-12-01047, and the Russian Foundation for Basic Research, project no. 17-02-0575a.

CONFLICT OF INTEREST

The authors declare that they have no conflicts of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • A. S. Tarasov
    • 1
  • D. V. Ishchenko
    • 1
    Email author
  • A. N. Akimov
    • 1
  • I. O. Akhundov
    • 1
  • V. A. Golyashov
    • 1
  • A. E. Klimov
    • 1
  • N. S. Pashchin
    • 1
  • S. P. Suprun
    • 1
  • E. V. Fedosenko
    • 1
  • V. N. Sherstyakova
    • 1
  • O. E. Tereshchenko
    • 1
  1. 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of SciencesNovosibirskRussia

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