Technical Physics

, Volume 63, Issue 12, pp 1824–1828 | Cite as

Features of the Frequency Dependence of Capacitance–Voltage Characteristics of a Semiconductor Structure of a Photoelectric Converter Based on a pn Junction with an Antireflective Film of Porous Silicon

  • V. V. TregulovEmail author


The frequency dependence of capacitance–voltage characteristics of a semiconductor structure with an antireflective film of porous silicon, which was formed by electrochemical etching above a pn junction, is studied. Photoluminescence spectra of layers of porous silicon of the experimental samples are also examined. It is demonstrated that the capacitance–voltage curves are shaped by competing influences of capacitances of the pn junction and the surface structure forming in a porous Si film due to its inhomogeneity. A structural model of layers of the studied semiconductor structure and a capacitance equivalent circuit are proposed.



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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Yesenin Ryazan State UniversityRyazanRussia

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