Technical Physics

, Volume 61, Issue 1, pp 91–96

Effect of growth mechanisms on the deformation of a unit cell and polarization reversal in barium–strontium titanate heterostructures on magnesium oxide

  • V. M. Mukhortov
  • Yu. I. Golovko
  • S. V. Biryukov
  • A. Anokhin
  • Yu. I. Yuzyuk
Physical Science of Materials

Abstract

The effect of a growth mechanism on the unit cell strain and the related change in the properties of single-crystal Ba0.8Sr0.2TiO3 films grown on MgO substrates according to the Frank–van der Merwe and Volmer–Weber growth mechanisms is studied. The unit cell strain is shown to depend substantially on the film thickness and the growth mechanism. It is found that the same film–substrate pair can be used to vary stresses in the film from two-dimensional tensile to compressive stresses due to a change in the growth mechanism and the film thickness.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    P. E. Janolin, J. Mater. Sci. 44, 5025 (2009).CrossRefADSGoogle Scholar
  2. 2.
    D. Li, S. Gariglio, C. Cancellieri, A. Fete, D. Stornaiuolo, and J.-M. Triscone, APL Mater. 2, 012102 (2014).CrossRefADSGoogle Scholar
  3. 3.
    L. W. Martin, Y.-H. Chu, and R. Ramesh, Mater. Sci. Eng., R. 68, 89 (2010).CrossRefGoogle Scholar
  4. 4.
    Yu. I. Yuzyuk, Solid Phys. State 54, 1026 (2012).CrossRefADSGoogle Scholar
  5. 5.
    A. S. Sigov, E. D. Mishina, and V. M. Mukhortov, Solid Phys. State 52, 762 (2010).CrossRefGoogle Scholar
  6. 6.
    G. Gerra, A. K. Tagantsev, N. Setter, and K. Parlinski, Phys. Rev. Lett. 96, 107603 (2006).CrossRefADSGoogle Scholar
  7. 7.
    D. G. Schlom, L. Chen, C.-B. Eom, K. M. Rabe, S. K. Streiffer, and J.-M. Triscone, Ann. Rev. Mater. Res. 37, 589 (2007).CrossRefADSGoogle Scholar
  8. 8.
    P.-E. Janolin, A. S. Anokhin, Z. Gui, V. M. Mukhortov, Yu. I. Golovko, N. Guiblin, S. Ravy, M. El. Marssi, Yu. I. Yuzyuk, L. Bellaiche, and B. Dkhil, J. Phys.: Condens. Matter. 26, 292201 (2014).Google Scholar
  9. 9.
    V. Chinchamalatpure, S. Ghosh, and G. Chaudhari, Mater. Sci. Appl. 1, 187 (2010).Google Scholar
  10. 10.
    J. H. van der Merwe, J. Appl. Phys. 34, 117 (1963).CrossRefADSGoogle Scholar
  11. 11.
    R. Hull and J. Bean, Crit. Rev. Solid State Mater. Scil. 17, 507 (1994).CrossRefADSGoogle Scholar
  12. 12.
    S. A. Kukushkin and V. V. Slezov, Dispersion Systems on Solid Surfaces: Thin Films Formation Mechanism (Nauka, St. Petersburg, 1996).Google Scholar
  13. 13.
    V. M. Mukhortov, Y. T. Golovko, G. N. Tolmachev, and A. N. Klevtzov, Ferroelectrics 247, 75 (2000).CrossRefGoogle Scholar
  14. 14.
    V. M. Mukhortov, Yu. I. Golovko, G. N. Tolmachev, and A. I. Mashchenko, Zh. Tekh. Fiz. 70, 1235 (2000).Google Scholar
  15. 15.
    V. M. Mukhortov and Yu. I. Yuzyuk, Heterostructures Based on Nanoscale Ferroelectric Films: Production, Properties, and Application (YuNTs RAN, Rotov-on-Don, 2008).Google Scholar
  16. 16.
    O. M. Zhigalina, A. N. Kuskova, A. L. Chuvilin, V. M. Mukhortov, and Yu. I. Golovko, Poverkhnost’ 7, 55 (2009).Google Scholar
  17. 17.
    Yu. I. Golovko, V. M. Mukhortov, Yu. I. Yuzyuk, P. E. Janogin, and B. Dkhil, Solid Phys. State 50, 485 (2008).CrossRefADSGoogle Scholar
  18. 18.
    V. B. Shirokov, Yu. I. Yuzyuk, B. Dkhil, and V. V. Lemanov, Phys. Rev. B 79, 144118 (2009).CrossRefADSGoogle Scholar
  19. 19.
    V. M. Mukhortov, V. V. Kolesnikov, Yu. I. Golovko, A. I. Mashchenko, and S. V. Biryukov, Tech. Phys. 50, 1089 (2005).CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • V. M. Mukhortov
    • 1
  • Yu. I. Golovko
    • 1
  • S. V. Biryukov
    • 1
  • A. Anokhin
    • 1
  • Yu. I. Yuzyuk
    • 2
  1. 1.Southern Scientific Center, Russian Academy of SciencesRostov-on-DonRussia
  2. 2.Southern Federal UniversityRostov-on-DonRussia

Personalised recommendations