Appearance conditions for a semiconducting-substrate-induced gap in the density of states in epitaxial graphene
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The density of states in a semiconducting substrate is described with a model assuming a parabolic electronic spectrum. Analytical criteria for the appearance of a gap (gaps) in the density of states in epitaxial graphene are derived, and its (their) parameters (width and position relative to the forbidden gap of the substrate) are found. A way to experimentally verify analytical data is suggested.
KeywordsHaldane Anderson Model Dirac Point Epitaxial Graphene Semiconducting Substrate
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- 4.D. R. Cooper, B. D’Anjou, N. Ghattamaneni, B. Harack, M. Hilke, A. Horth, N. Majlis, M. Massicotte, L. Vandsburger, E. Whiteway, and V. Yu, arXiv:condmat/1110.6557.Google Scholar
- 8.P. S. Kireev, Semiconductor Physics (Mir, Moscow, 1969).Google Scholar
- 13.C. Mathieu, N. Barrett, J. Rault, Y. Y. Mi, B. Zhang, W. A. de Heer, C. Berger, E. H. Conra, and O. Renault, arXiv:cond-mat/1104.1359.Google Scholar