Appearance conditions for a semiconducting-substrate-induced gap in the density of states in epitaxial graphene
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The density of states in a semiconducting substrate is described with a model assuming a parabolic electronic spectrum. Analytical criteria for the appearance of a gap (gaps) in the density of states in epitaxial graphene are derived, and its (their) parameters (width and position relative to the forbidden gap of the substrate) are found. A way to experimentally verify analytical data is suggested.
KeywordsHaldane Anderson Model Dirac Point Epitaxial Graphene Semiconducting Substrate
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