Abstract
Aluminum-doped zinc oxide thin films have been grown by atomic layer deposition at a temperature of 200°C. Using X-ray diffraction, it has been established that the ZnO:Al thin films exhibits the reflections from the (100), (002), (110), and (201) ZnO hexagonal phase planes. The (101) and (102) planes have also been detected by electron diffraction. The ZnO:Al thin films grow smooth with a root-mean-square roughness of Rq = 0.33 nm and characteristic nanocrystallite sizes of ~70 and ~15 nm without additional aluminum or aluminum oxide phases. The transmission at a wavelength of 550 nm with regard to the substrate has been found to be 96%. The refractive indices and absorption coefficients of the ZnO:Al thin films in the wavelength range of 250–900 nm have been determined. The maximum refractive indices and absorption coefficients have been found to be 2.09 at a wavelength of 335 nm and 0.39 at a wavelength of 295 nm, respectively. The optical band gap is 3.56 eV. The resistivity, Seebeck coefficient, and power factor of the ZnO:Al thin films are ∼1.02 × 10–3 Ω cm, –60 μV/K, and 340 μW m–1 K–2 at room temperature, respectively. The maximum power factor attains 620 μW m–1 K–2 at a temperature of 200°C.
Similar content being viewed by others
REFERENCES
X. G. Yu, T. J. Marks, and A. Facchetti, Nat. Mater. 15, 383 (2016).
I. A. Tambasov, V. G. Maygkov, A. S. Tarasov, A. A. Ivanenko, L. E. Bykova, I. V. Nemtsev, E. V. Eremin, and E. V. Yozhikova, Semicond. Sci. Technol. 29, 082001 (2014).
I. A. Tambasov, V. G. Myagkov, A. A. Ivanenko, I. V. Nemtsev, L. E. Bykova, G. N. Bondarenko, J. L. Mihlin, I. A. Maksimov, V. V. Ivanov, S. V. Balashov, and D. S. Karpenko, Semiconductors 47, 569 (2013).
I. A. Tambasov, V. G. Myagkov, A. A. Ivanenko, L. E. Bykova, E. V. Yozhikova, I. A. Maksimov, and V. V. Ivanov, Semiconductors 48, 207 (2014).
C. G. Granqvist, Sol. Energy Mater. Sol. Cells 91, 1529 (2007).
P. D. C. King and T. D. Veal, J. Phys.: Condens. Matter 23, 334214 (2011).
J. Keller, F. Chalvet, J. Joel, A. Aijaz, T. Kubart, L. Riekehr, M. Edoff, L. Stolt, and T. Torndahl, Prog. Photovolt. 26, 13 (2018).
E. Fortunato, P. Barquinha, and R. Martins, Adv. Mater. 24, 2945 (2012).
G. Korotcenkov, Mater. Sci. Eng. B 139, 1 (2007).
M. Morales-Masis, F. Dauzou, Q. Jeangros, A. Da-birian, H. Lifka, R. Gierth, M. Ruske, D. Moet, A. Hessler-Wyser, and C. Ballif, Adv. Funct. Mater. 26, 384 (2016).
Z. Szabo, Z. Baji, P. Basa, Z. Czigany, I. Barsony, H. Y. Wang, and J. Volk, Appl. Surf. Sci. 379, 304 (2016).
A. Klein, C. Korber, A. Wachau, F. Sauberlich, Y. Gassenbauer, S. P. Harvey, D. E. Proffit, and T. O. Mason, Materials 3, 4892 (2010).
O. Bierwagen, Semicond. Sci. Technol. 30, 024001 (2015).
G. Luka, B. S. Witkowski, L. Wachnicki, R. Jakiela, I. S. Virt, M. Andrzejczuk, M. Lewandowska, and M. Godlewski, Mater. Sci. Eng. B 186, 15 (2014).
A. Stadler, Materials 5, 661 (2012).
Y. L. Liu, Y. F. Li, and H. B. Zeng, J. Nanomater. 2013, 196521 (2013).
G. Korotcenkov, V. Brinzari, and M. H. Ham, Crystals 8, 14 (2018).
G. J. Snyder and E. S. Toberer, Nat. Mater. 7, 105 (2008).
J. He and T. M. Tritt, Science (Washington, DC, U. S.) 357, 1369 (2017).
L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B 47, 12727 (1993).
S. Ortega, M. Ibanez, Y. Liu, Y. Zhang, M. V. Kovalenko, D. Cadavid, and A. Cabot, Chem. Soc. Rev. 46, 3510 (2017).
W. Kim, J. Zide, A. Gossard, D. Klenov, S. Stemmer, A. Shakouri, and A. Majumdar, Phys. Rev. Lett. 96, 045901 (2006).
C. Yang, D. Souchay, M. Kneiss, M. Bogner, M. Wei, M. Lorenz, O. Oeckler, G. Benstetter, Y. Q. Fu, and M. Grundmann, Nat. Commun. 8, 16076 (2017).
T. Tynell and M. Karppinen, Semicond. Sci. Technol. 29, 043001 (2014).
G. Luka, T. A. Krajewski, B. S. Witkowski, G. Wisz, I. S. Virt, E. Guziewicz, and M. Godlewski, J. Mater. Sci.-Mater. Electron. 22, 1810 (2011).
I. A. Tambasov, A. S. Tarasov, M. N. Volochaev, M. V. Rautskii, V. G. Myagkov, L. E. Bykova, V. S. Zhigalov, A. A. Matsynin, and E. V. Tambasova, Phys. E (Amsterdam, Neth.) 84, 162 (2016).
V. G. Myagkov, L. E. Bykova, A. A. Matsynin, M. N. Volochaev, V. S. Zhigalov, I. A. Tambasov, Y. L. Mikhlin, D. A. Velikanov, and G. N. Bondarenko, J. Solid State Chem. 246, 379 (2017).
I. A. Tambasov, A. S. Voronin, N. P. Evsevskaya, M. N. Volochaev, Y. V. Fadeev, A. S. Krylov, A. S. Aleksandrovskii, A. V. Luk’yanenko, S. R. Abelyan, and E. V. Tambasova, Phys. Solid State 60, 2649 (2018).
E. Ochoa-Martinez, E. Navarrete-Astorga, J. Ramos-Barrado, and M. Gabas, Appl. Surf. Sci. 421, 680 (2017).
Q. H. Li, D. L. Zhu, W. J. Liu, Y. Liu, and X. C. Ma, Appl. Surf. Sci. 254, 2922 (2008).
M. H. Hong, H. Choi, D. I. Shim, H. H. Cho, J. Kim, and H. H. Park, Solid State Sci. 82, 84 (2018).
S. Saini, P. Mele, H. Honda, D. J. Henry, P. E. Hopkins, L. Molina-Luna, K. Matsumoto, K. Miyazaki, and A. Ichinose, Jpn. J. Appl. Phys. 53, 060306 (2014).
J. T. Luo, Z. H. Zheng, G. X. Liang, F. Li, and P. Fan, Mater. Res. Bull. 94, 307 (2017).
ACKNOWLEDGMENTS
The electron microscopy investigations were carried out on the equipment of the Center of Collective Use of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences. We are grateful to F.A. Baron (Krasnoyarsk Scientific Center) for offering the opportunity of working at the growth equipment and critical discussion of the details of the sample preparation process.
Funding
This study was supported by the Russian Science Foundation, project no. 17-72-10079.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflicts of interest.
Additional information
Translated by E. Bondareva
Rights and permissions
About this article
Cite this article
Tambasov, I.A., Volochaev, M.N., Voronin, A.S. et al. Structural, Optical, and Thermoelectric Properties of the ZnO:Al Films Synthesized by Atomic Layer Deposition. Phys. Solid State 61, 1904–1909 (2019). https://doi.org/10.1134/S1063783419100354
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783419100354