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Physics of the Solid State

, Volume 58, Issue 10, pp 2135–2140 | Cite as

Intercalation synthesis of cobalt silicide under a graphene layer

  • G. S. Grebenyuk
  • M. V. Gomoyunova
  • O. Yu. Vilkov
  • B. V. Sen’kovskii
  • I. I. Pronin
Surface Physics and Thin Films

Abstract

The silicon intercalation under single-layer graphene formed on the surface of an epitaxial Co(0001) film was investigated. The experiments were performed under conditions of ultra-high vacuum. The thickness of silicon films was varied within the range of up to 1 nm, and the temperature of their annealing was 500°C. The characterization of the samples was carried out in situ by the methods of low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and magnetic linear dichroism in photoemission of Co 3p electrons. New data were obtained on the evolution of the atomic and electronic structure, as well as on the magnetic properties of the system with an increase in the amount of intercalated silicon. It was shown that the intercalation under a graphene layer is accompanied by the synthesis of surface silicide Co2Si and a solid solution of silicon in cobalt.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • G. S. Grebenyuk
    • 1
  • M. V. Gomoyunova
    • 1
  • O. Yu. Vilkov
    • 2
  • B. V. Sen’kovskii
    • 3
  • I. I. Pronin
    • 1
    • 4
  1. 1.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State UniversitySt. PetersburgRussia
  3. 3.Institute of Solid State PhysicsDresden University of TechnologyDresdenGermany
  4. 4.St. Petersburg National Research University of Information Technologies, Mechanics and OpticsSt. PetersburgRussia

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