Physics of the Solid State

, Volume 58, Issue 9, pp 1876–1881 | Cite as

Epitaxial gallium oxide on a SiC/Si substrate

  • S. A. Kukushkin
  • V. I. Nikolaev
  • A. V. Osipov
  • E. V. Osipova
  • A. I. Pechnikov
  • N. A. Feoktistov
Surface Physics and Thin Films

Abstract

Well-textured gallium oxide β-Ga2O3 layers with a thickness of ~1 μm and a close to epitaxial layer structure were grown by the method of chloride vapor phase epitaxy on Si(111) wafers with a nano-SiC buffer layer. In order to improve the growth, a high-quality silicon carbide buffer layer ~100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The β-Ga2O3 films were thoroughly investigated using reflection high-energy electron diffraction, ellipsometry, X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. The investigations revealed that the films are textured with a close to epitaxial structure and consist of a pure β-phase Ga2O3 with the (\(\overline 2 01\)) orientation. The dependence of the dielectric constant of epitaxial β-Ga2O3 on the photon energy ranging from 0.7 to 6.5 eV in the isotropic approximation was measured.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • S. A. Kukushkin
    • 1
    • 2
    • 3
  • V. I. Nikolaev
    • 3
    • 4
    • 5
  • A. V. Osipov
    • 1
    • 2
    • 3
  • E. V. Osipova
    • 1
  • A. I. Pechnikov
    • 3
    • 4
  • N. A. Feoktistov
    • 1
    • 5
  1. 1.Institute of Problems of Mechanical EngineeringRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Peter the Great St. Petersburg Polytechnic UniversitySt. PetersburgRussia
  3. 3.St. Petersburg National Research University of Information Technologies, Mechanics and OpticsSt. PetersburgRussia
  4. 4.Perfect Crystals LLCSt. PetersburgRussia
  5. 5.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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