Advertisement

Physics of the Solid State

, Volume 58, Issue 5, pp 967–970 | Cite as

Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

  • S. A. Kukushkin
  • A. V. Osipov
  • O. N. SergeevaEmail author
  • D. A. Kiselev
  • A. A. Bogomolov
  • A. V. Solnyshkin
  • E. Yu. Kaptelov
  • S. V. Senkevich
  • I. P. Pronin
Ferroelectricity

Abstract

This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride–hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

Keywords

Molecular Beam Epitaxy Polarization Vector Polar Axis Electric Response Aluminum Nitride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    V. Fuflyigin, E. Salley, A. Osinsky, and P. Norris, Appl. Phys. Lett. 77, 3075 (2000).ADSCrossRefGoogle Scholar
  2. 2.
    S. Trolier-McKinstry and P. Muralt, J. Electroceram. 12, 7 (2004).CrossRefGoogle Scholar
  3. 3.
    K. Tonisch, V. Cimalla, Ch. Foerster, H. Romanus, O. Ambacher, and D. Dontsov, Sens. Actuators, A 132, 658 (2006).CrossRefGoogle Scholar
  4. 4.
    E. E. Crisman, J. S. Derov, A. J. Drehman, and O. J. Gregory, Electrochem. Solid State Lett. 8 (3), H31 (2005).CrossRefGoogle Scholar
  5. 5.
    S. A. Kukushkin and A. V. Osipov, Phys. Solid State 50 (7), 1238 (2008).ADSCrossRefGoogle Scholar
  6. 6.
    S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014).ADSCrossRefGoogle Scholar
  7. 7.
    V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, L. M. Sorokin, N. A. Feoktistov, Sh. Sharofidinov, M. P. Shcheglov, S. A. Kukushkin, L. I. Mets, and A. V. Osipov, Tech. Phys. Lett. 36 (6), 496 (2010).ADSCrossRefGoogle Scholar
  8. 8.
    V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, L. M. Sorokin, N. A. Feoktistov, Sh. Sharofidinov, M. P. Shcheglov, S. A. Kukushkin, L. I. Mets, and A. V. Osipov, Opt. Zh. 78 (7), 23 (2011).Google Scholar
  9. 9.
    O. N. Sergeeva, A. A. Bogomolov, A. V. Solnyshkin, N. V. Komarov, S. A. Kukushkin, D. M. Krasovitsky, A. L. Dudin, D. A. Kiselev, S. V. Ksenich, S. V. Senkevich, E. Yu. Kaptelov, and I. P. Pronin, Ferroelectrics 477, 443 (2015).CrossRefGoogle Scholar
  10. 10.
    S. A. Kukushkin and A. V. Osipov, Phys.—Usp. 41 (10), 983 (1998).ADSCrossRefGoogle Scholar
  11. 11.
    H. J. Zajosz, Thin Solid Films 62 (2), 229 (1979).ADSCrossRefGoogle Scholar
  12. 12.
    S. V. Yablonskii and E. A. Soto-Bustamante, J. Exp. Theor. Phys. 111 (5), 814 (2010).ADSCrossRefGoogle Scholar
  13. 13.
    M. Botea, A. Iuga, and L. Pintilie, Appl. Phys. Lett. 103, 232902 (2013).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • S. A. Kukushkin
    • 1
  • A. V. Osipov
    • 1
  • O. N. Sergeeva
    • 2
    Email author
  • D. A. Kiselev
    • 3
  • A. A. Bogomolov
    • 2
  • A. V. Solnyshkin
    • 2
  • E. Yu. Kaptelov
    • 4
  • S. V. Senkevich
    • 1
    • 4
  • I. P. Pronin
    • 4
  1. 1.Institute of Problems of Mechanical EngineeringRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Tver State UniversityTver’Russia
  3. 3.National University of Science and Technology MISiSMoscowRussia
  4. 4.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

Personalised recommendations