Physics of the Solid State

, Volume 56, Issue 6, pp 1256–1260 | Cite as

Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies

  • V. V. Bolotov
  • K. E. Ivlev
  • P. M. Korusenko
  • S. N. Nesov
  • S. N. Povoroznyuk
Surface Physics and Thin Films


The changes in the electronic structure and phase composition of porous silicon under action of pulsed ionic beams have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) using synchrotron radiation. The Si 2p and O 1s core photoemission spectra for different photoelectron collection angles, valence band photoemission spectra, and X-ray absorption near-edge fine structure spectrain the region of Si L 2,3 edges of the initial and irradiated samples have been analyzed. It has been found that, as a result of the irradiation, a thin oxide film consisting predominantly of higher oxide SiO2 is formed on the porous silicon surface, which increases the energy gap of the silicon oxide. Such film exhibits passivation properties preventing the degradation of the composition and properties of porous silicon in contact with the environment.


Porous Silicon Elemental Silicon Porous Silicon Sample Porous Silicon Surface Pulse Ionic Beam 
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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • V. V. Bolotov
    • 1
  • K. E. Ivlev
    • 1
  • P. M. Korusenko
    • 1
  • S. N. Nesov
    • 1
  • S. N. Povoroznyuk
    • 1
  1. 1.Omsk Scientific CenterSiberian Branch of the Russian Academy of SciencesOmskRussia

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