Advertisement

Physics of the Solid State

, Volume 55, Issue 10, pp 2161–2164 | Cite as

X-ray diffraction studies of heterostructures based on solid solutions Al x Ga1 − x As y P1 − y : Si

  • P. V. SeredinEmail author
  • V. E. Ternovaya
  • A. V. Glotov
  • A. S. Len’shin
  • I. N. Arsent’ev
  • D. A. Vinokurov
  • I. S. Tarasov
  • H. Leiste
  • T. Prutskij
Proceedings of the Third All-Russian Symposium “Semiconductor Lasers: Physics and Technology” St. Petersburg, Russia, November 13–16, 2012

Abstract

The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions Al x Ga1−x As heavily doped with phosphorus and silicon has been studied using high-resolution X-ray diffraction and X-ray microanalysis. The prepared epitaxial films are five-component solid solutions (As x Ga1−x As y P1 − y )1 − z Si z .

Keywords

Solid Solution Reciprocal Space Epitaxial Film Multi Component Crystal Lattice Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Zh. I. Alferov, Semiconductors 32(1), 1 (1998).ADSCrossRefGoogle Scholar
  2. 2.
    Molecular Beam Epitaxy and Heterostructures, Ed. by L. L. Chang and K. Ploog (Springer-Verlag, Berlin, 1984; Mir, Moscow, 1989).Google Scholar
  3. 3.
    D. A. Vinokurov, V. A. Kapitonov, A. V. Lyutetskii, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, A. L. Stankevich, V. V. Shamakhov, L. S. Vavilova, and I. S. Tarasov, Semiconductors 46(10), 1321 (2012).ADSCrossRefGoogle Scholar
  4. 4.
    A. Yu. Andreev, A. Yu. Leshko, A. V. Lyutetskii, A. A. Marmalyuk, T. A. Nalyot, A. A. Padalitsa, N. A. Pikhtin, D. R. Sabitov, V. A. Simakov, S. O. Slipchenko, M. A. Khomylev, and I. S. Tarasov, Semiconductors 40(5), 611 (2006).ADSCrossRefGoogle Scholar
  5. 5.
    P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, and I. S. Tarasov, Appl. Surf. Sci. 267, 181 (2013).ADSCrossRefGoogle Scholar
  6. 6.
    P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, A. S. Len’shin, M. S. Smirnov, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov, Semiconductors 46(6), 719 (2012).ADSCrossRefGoogle Scholar
  7. 7.
    B. B. Kuznetsov, L. S. Lunin, and V. I. Ratushnyi, Heterostructures Based on Quaternary and Quinary Solid Solutions AIIIBV (North-Caucasian Research Center of High School, Southern Federal University, Rostov-on-Don, 2003) [in Russian].Google Scholar
  8. 8.
    P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, and I. S. Tarasov, Physica B (Amsterdam) 405(22), 4607 (2010).ADSCrossRefGoogle Scholar
  9. 9.
    P. V. Seredin, A. V. Glotov, V. E. Ternovaya, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov, Semiconductors 45(4), 481 (2011).ADSCrossRefGoogle Scholar
  10. 10.
    P. V. Seredin, Kondensirovannye Sredy Mezhfaznye Granitsy 12(3), 258 (2010).Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2013

Authors and Affiliations

  • P. V. Seredin
    • 1
    Email author
  • V. E. Ternovaya
    • 1
  • A. V. Glotov
    • 1
  • A. S. Len’shin
    • 1
  • I. N. Arsent’ev
    • 2
  • D. A. Vinokurov
    • 2
  • I. S. Tarasov
    • 2
  • H. Leiste
    • 3
  • T. Prutskij
    • 4
  1. 1.Voronezh State UniversityVoronezhRussia
  2. 2.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  3. 3.Karlsruhe Nano Micro FacilityEggenstein-LeopoldshafenGermany
  4. 4.Instituto de CienciasBenemérita Universidad Autónoma de PueblaChignahuapan, PueblaMexico

Personalised recommendations