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Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The present study reports the effects of 650-keV Ar2+ ion irradiation on the structural, optical, and device characteristics of Ru|Pt|n-GaN Schottky barrier diodes (SBDs). Ion irradiation induces the broadening of the GaN X-ray diffraction peaks due to induced structural deformities. The photoluminescence spectroscopy intensity decreases with the increase in the fluence of ions. The recombination of charge carriers induced by the geometrical distortions, and the formation of defects states, shifts the peak positions to shorter wavelengths. The electrical characteristics of these devices exhibit significant changes due to modification at the interface and charge transport properties after Ar2+ ion irradiation. The charge-transport properties are affected by these deformities at higher fluences and attributed to the contributions of various current conduction mechanisms, including defect-assisted tunnelling and generation–recombination (G–R) currents along with thermionic emission.

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ACKNOWLEDGMENTS

The authors are thankful to the staff and technicians at IUAC, New Delhi, India, for providing access to Low Energy Beam Ion irradiation, I–V, and C–V measurement facilities. The authors are also grateful to the Central facility for nanotechnology (CFN), and the School of Physics (UGC-NRC), University of Hyderabad, for providing access to necessary experimental facilities.

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Authors and Affiliations

  1. Department of Studies in Physics, Manasagangotri, University of Mysore, 570006, Mysuru, India

    S. Kumar & K. Sannathammegowda

  2. Department of Physics, K L E Society’s R L S Institute, 590001, Belagavi, India

    V. Kumar Mariswamy

  3. Inter-University Accelerator Centre (IUAC), 110067, New Delhi, India

    A. Kumar & A. Kandasami

  4. Centre for Advanced Studies in Electronics Science and Technology (CASEST), School of Physics, University of Hyderabad, 500046, Hyderabad, India

    A. Nimmala & S. V. S. Nageswara Rao

  5. School of Physics, University of Hyderabad, 500046, Hyderabad, India

    S. V. S. Nageswara Rao

  6. Department of Physics, Sri Venkateswara University Tirupati, 517502, Tirupati, India

    V. Rajagopal Reddy

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  1. S. Kumar
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Kumar, S., Mariswamy, V.K., Kumar, A. et al. Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes. Semiconductors 54, 1641–1649 (2020). https://doi.org/10.1134/S1063782620120155

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